Micro light-emitting diode backboard and manufacturing method thereof

A technology for light-emitting diodes and a manufacturing method, which is applied to electrical components, electrical solid-state devices, circuits, etc., can solve the problems of easy peeling cracks, high interface trap density, and complicated process methods, and achieves reduction of sidewall leakage current and light emitting surface. The effect of roughening and improving the luminous efficiency

Inactive Publication Date: 2020-09-29
NANJING CEC PANDA LCD TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The commonly used sidewall protection is to deposit inorganic insulating layers such as SiO2, SiN, MgO and Gd2O3, etc., and there is a high interface trap density between them and GaN, which cannot solve the problem of edge leakage current.
Through the side wall protection scheme of the organic film, the organic film has poor bonding force w

Method used

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  • Micro light-emitting diode backboard and manufacturing method thereof
  • Micro light-emitting diode backboard and manufacturing method thereof
  • Micro light-emitting diode backboard and manufacturing method thereof

Examples

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Example

[0049] In the first embodiment, photoelectrochemistry is used to oxidize the metal gallium layer at room temperature. The transient substrate 20 after the metal gallium layer is deposited can be immersed in an acid solution, or an alkali solution or an aqueous solution, and supplemented with an external voltage and ultraviolet light. , Forming a gallium oxide layer 31, the chemical formula is as follows:

[0050] 2GaN+6h + +6OH - →Ga 2 O 3 +3H 2 O+N 2 ↑.

Example

[0051] In the second embodiment, oxidation is carried out in a high temperature and high oxygen environment. The high temperature can promote the separation of N atoms, and the Ga atoms and O atoms react to produce the gallium oxide layer 31.

[0052] In the second embodiment, the gallium oxide layer 31 is formed by oxygen plasma treatment.

[0053] After oxidizing the gallium nitride material layer to form the gallium oxide layer 31 by one of the above methods, you can also choose to deposit gallium oxide on the gallium oxide layer 31 formed after the gallium nitride material layer is oxidized to form a thickened gallium oxide. Layer, so as to achieve the purpose of thickening, of course, this step may or may not be included.

[0054] The invention also provides a miniature light-emitting diode backplane, such as Figure 7 As shown, it includes a back plate 40, a plurality of bonding metal layers 41 located on the back plate 40 and arrayed separately, a lower contact electrode 121 b...

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Abstract

The invention provides a micro light-emitting diode backboard and a manufacturing method thereof. The manufacturing method comprises the following steps: removing a gallium oxide layer on at least part of the upper surface of a micro light-emitting diode and forming a roughened surface; forming the gallium oxide layers on the upper surface and the side wall of the micro light-emitting diode, removing the gallium oxide layers located on at least part of the surface of the micro light-emitting diode, and increasing the light emitting rate, wherein at least the gallium oxide layer on the side wall of the micro light-emitting diode is not easy to peel off, so that a better side wall protection effect can be achieved, the side wall leakage current is reduced, and the light emitting efficiency is improved. The method has no requirement on the shape of the side wall of the micro light-emitting diode, the process is simple, and the purposes of side wall protection and light-emitting surface roughening can be achieved at the same time.

Description

technical field [0001] The invention belongs to the technical field of micro light emitting diodes, in particular to a micro light emitting diode backplane and a manufacturing method thereof. Background technique [0002] Micro light-emitting diode devices (Mirco-LEDs) are increasingly considered as an alternative technology for existing light sources. For example, Mirco-LEDs are used in signage, traffic lights, car taillights, mobile electronic displays and televisions. Compared with traditional light sources, Mirco-LED can improve conversion efficiency, long service life, variable emission spectrum and can be made into various shapes. [0003] The existing methods for Mirco-LEDs to improve performance are to reduce non-radiative recombination, make radiative recombination dominant, and increase the light extraction rate of LEDs to improve the luminous efficiency of LEDs. In order to reduce the sidewall leakage current, the sidewall of the Mirco-LED is usually protected b...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/24H01L33/36H01L33/44H01L27/15
CPCH01L27/156H01L33/0075H01L33/24H01L33/36H01L33/44H01L2933/0016H01L2933/0025
Inventor 周宇朱充沛王贤娜王俊星
Owner NANJING CEC PANDA LCD TECH
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