Micro light-emitting diode backboard and manufacturing method thereof

Abstract

The invention provides a micro light-emitting diode backboard and a manufacturing method thereof. The manufacturing method comprises the following steps: removing a gallium oxide layer on at least part of the upper surface of a micro light-emitting diode and forming a roughened surface; forming the gallium oxide layers on the upper surface and the side wall of the micro light-emitting diode, removing the gallium oxide layers located on at least part of the surface of the micro light-emitting diode, and increasing the light emitting rate, wherein at least the gallium oxide layer on the side wall of the micro light-emitting diode is not easy to peel off, so that a better side wall protection effect can be achieved, the side wall leakage current is reduced, and the light emitting efficiency is improved. The method has no requirement on the shape of the side wall of the micro light-emitting diode, the process is simple, and the purposes of side wall protection and light-emitting surface roughening can be achieved at the same time.

Description

technical field [0001] The invention belongs to the technical field of micro light emitting diodes, in particular to a micro light emitting diode backplane and a manufacturing method thereof. Background technique [0002] Micro light-emitting diode devices (Mirco-LEDs) are increasingly considered as an alternative technology for existing light sources. For example, Mirco-LEDs are used in signage, traffic lights, car taillights, mobile electronic displays and televisions. Compared with traditional light sources, Mirco-LED can improve conversion efficiency, long service life, variable emission spectrum and can be made into various shapes. [0003] The existing methods for Mirco-LEDs to improve performance are to reduce non-radiative recombination, make radiative recombination dominant, and increase the light extraction rate of LEDs to improve the luminous efficiency of LEDs. In order to reduce the sidewall leakage current, the sidewall of the Mirco-LED is usually protected b...

AI Technical Summary

Problems solved by technology

[0004] The commonly used sidewall protection is to deposit inorganic insulating layers such as SiO2, SiN, MgO and Gd2O3, etc., and there is a high interface trap density between them and GaN, which cannot solve the problem of edge leakage current.

Through the side wall protection scheme of the organic film, the organic film has poor bonding force with the GaN side wall, and it is easy to peel off and generate cracks

There are also some methods of doping, such as doping the sidewall with metal and other materials to change the characteristics of the GaN sidewall. This process is complicated.

[0005] For vertical LED devices, the above-mentioned sidewall processing processes are more complicated

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