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mram storage array

A storage array and array technology, applied in information storage, static storage, digital storage information, etc., can solve problems such as affecting the density of memory arrays, and achieve the effect of speeding up the turnover speed and consistency, speeding up the turnover speed, and increasing the density

Active Publication Date: 2022-06-24
CETHIK GRP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004]However, when forming a memory array, in order to prevent leakage between metal electrodes, the metal electrodes must maintain a certain distance. In the traditional memory array design, oval electrodes are used Can affect the density of the memory array

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Embodiment Construction

[0019] In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments It is only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0020] An embodiment of the present invention provides an MRAM storage array, including: a plurality of storage cells arranged in a rectangular array, each storage cell includes an MTJ cell, the magnetization direction of the MTJ cell is along the growth direction of the MTJ film, and two adjacent two in the array T...

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Abstract

The present invention provides an MRAM memory array, comprising: a plurality of memory cells arranged in a rectangular array, the memory cells include MTJ cells, the magnetization direction of the MTJ cells is along the growth direction of the MTJ film, and two adjacent cells in the array The tops of the MTJ units in each of the storage units are provided with a common magnetic electrode, and all the magnetic electrodes in the array are arranged in the same direction, and the magnetic electrodes are used to provide one for the MTJ units in two adjacent storage units. The magnetic moment is used to assist the free layer of the MTJ unit to realize flipping; wherein, the cross-sectional shape of the MTJ unit in the storage unit is a circular shape, and the cross-sectional shape of the magnetic electrode shared by two adjacent storage units is A geometric shape with a major and minor axis. The invention can increase the density of the storage array.

Description

technical field [0001] The present invention relates to the technical field of MRAM memory, in particular to an MRAM memory array. Background technique [0002] Spin transfer torque magnetic memory (STT-MRAM) is a magnetic random access memory that uses spin polarized current to change the state of MTJ. The biggest advantage over traditional memory such as DRAM is that it is non-volatile (data is not lost when power is turned off). In order to reduce the size of the MTJ as much as possible on the basis of meeting the data retention time of the MTJ, the magnetic recording and reference layers in the MTJ need to use perpendicular magnetization materials. [0003] For the MTJ unit with a vertical structure, in order to speed up the flipping of the free layer and achieve the consistency of the flipping of the free layer, a magnetic layer or a magnetic electrode whose magnetization direction is fixed in the plane is grown above the free layer, and a magnetic field is generated a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/16G11C5/02G11C5/08
CPCG11C11/165G11C5/02G11C5/08G11C11/16
Inventor 杨保林熊保玉承祎琳何世坤
Owner CETHIK GRP
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