Microchip laser for preventing pump light from bleaching passive Q-switched crystal

A technology of microchip lasers and pump light, which is applied in lasers, laser components, phonon exciters, etc., can solve problems such as concentration quenching and laser stability reduction, and achieve improved stability, characteristics and structure, Good for heat dissipation

Pending Publication Date: 2020-10-13
BEIJING UNIV OF TECH
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Problems solved by technology

However, these methods have shortcomings. The method of avoiding pump bleaching by using a high-concentration gain medium will lead to concentration quenching; and the method of increasing the cavity length to reduce pump bleaching will widen the pulse width of the microchip laser; The method of coating between the gain medium and the Q-switching element to reduce pump bleaching will make it difficult to integrate these two components firmly, reducing the stability of the overall laser

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  • Microchip laser for preventing pump light from bleaching passive Q-switched crystal
  • Microchip laser for preventing pump light from bleaching passive Q-switched crystal
  • Microchip laser for preventing pump light from bleaching passive Q-switched crystal

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Embodiment Construction

[0033] The specific implementation content of the passive Q-switched crystal microchip laser for avoiding pump photobleaching of the present invention will be further described below in conjunction with the accompanying drawings:

[0034] refer to figure 1 is a schematic diagram of a microchip laser that avoids pump photobleaching by passively Q-switching the crystal. The passive Q-switched microchip laser is composed of a pump source 1, a pump coupling system 2, a gain medium 3, an ASE suppression crystal 4, a passive Q-switched crystal 5, a pump light and a laser separation structure 6.

[0035] refer to figure 2 , the upper and lower parts of the gain medium Yb:YAG of the microchip laser are bonded with the ASE-suppressing crystal V:YAG. The middle layer is the gain medium ytterbium-doped yttrium aluminum garnet Yb:YAG, the upper and lower layers are vanadium-doped yttrium aluminum garnet V:YAG, figure 2 The inside and outside sides of the paper are sanded. The right ...

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Abstract

The invention discloses a microchip laser capable of preventing pump light from bleaching a passive Q-switched crystal. The microchip laser comprises a pump source, a pump coupling system, a gain medium, an ASE suppression crystal, the passive Q-switched crystal, the pump light and a laser separation structure. A 45-degree angle structure is cut on one side of the microchip laser, pump light and laser are separated through a film on the side, and bleaching of the passive Q-switched crystal by the pump light is avoided. Through hot bonds and technologies, the crystals are effectively and firmlycombined, the stability of the laser can be improved, and miniaturization of the microchip laser is facilitated. And the bonding interface of the bonded crystal is stable, thereby being beneficial toheat dissipation of the crystal. The microchip laser is widely applied to other solid-state lasers for distance measurement, the purposes of miniaturization, large energy and narrow pulse width are easy to achieve, and engineering application is easy to achieve. Pump light is completely prevented from entering the saturable absorption Q-switched crystal, so that the problem of pump bleaching is avoided, the monopulse energy output by oscillation laser is improved, and the pulse width is reduced.

Description

technical field [0001] The invention designs a ytterbium-doped yttrium aluminum garnet passive Q-switching microchip laser with large energy, small volume and ps level pulse width. A new microchip laser structure was designed, including the structure of passive Q-switched crystals to avoid pump photobleaching, the structure of suppressing ASE, and through The bonding between stones constitutes a microchip laser with a new structure, which belongs to the technical field of solid lasers. Background technique [0002] Ytterbium-doped YAG passively Q-switched all-solid-state microlaser pumped by laser diode (LD) has the characteristics of compact and simple structure, high reliability, small size, large single pulse energy, and narrow pulse width (ps). There is a great application demand in laser ranging. Moreover, the higher the single pulse energy of the laser, the narrower the pulse width, and the farther the distance that can be measured. In addition, this laser also has ...

Claims

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Application Information

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IPC IPC(8): H01S3/11H01S3/16H01S3/06
CPCH01S3/0627H01S3/1118H01S3/1643
Inventor 李强冯海洋惠勇凌雷訇朱占达
Owner BEIJING UNIV OF TECH
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