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Surface treatment method suitable for silicon wafer of solar cell

A solar cell and surface treatment technology, applied in the field of solar cells, can solve the problem of no space for further reducing reflectivity, and achieve the effects of good application and promotion prospects, improved conversion efficiency, and improved electrical performance.

Pending Publication Date: 2020-10-20
HANWHA SOLARONE QIDONG
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The principle of solar cells is the "photovoltaic" effect. The ratio of incident light directly affects the output efficiency of the cell. Therefore, reducing the reflectivity of the cell surface is the most direct way to improve the conversion efficiency of the cell. The conventional anti-reflection process is based on silicon Texture is made on the surface of the chip by chemical etching, but the technology is very mature now, and there is basically no room for further reducing the reflectivity.

Method used

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  • Surface treatment method suitable for silicon wafer of solar cell
  • Surface treatment method suitable for silicon wafer of solar cell
  • Surface treatment method suitable for silicon wafer of solar cell

Examples

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Embodiment 1

[0029] refer to Figures 1 to 4 , a method for surface treatment of silicon wafers suitable for solar cells in this embodiment, specifically comprising the following steps:

[0030] Step S1: Laser Treatment

[0031] Laser treatment is performed on the surface of the silicon wafer to reduce the reflectivity of the silicon wafer surface.

[0032] Laser treatment is to use laser to form pits on the surface of silicon wafers, and the pits are regularly distributed, such as figure 2 shown. The laser parameters are power 1-200W, frequency 100-600kHz, speed 0.2-2m / s. In this embodiment, the preferred laser parameters are power 100W, frequency 300kHz, and speed 1m / s.

[0033] The reflectivity is reduced by forming pits on the surface of the silicon wafer. The diameter of the pits is 20-40 μm, the depth of the pits is 5-15 μm, and the distance between adjacent pits is 0-10 μm. In this embodiment, the diameter of the pits is 30 μm, the depth of the pits is 10 μm, and the adjacent...

Embodiment 2

[0055] In this example, the reflectance test and comparison were carried out on the silicon wafers with three different reflectances prepared in Example 1, Comparative Example 1 and Comparative Example 2, and the conversion efficiency test was carried out on the cells further prepared from the silicon wafers. Among them, Voc is the open circuit voltage (opencircuit voltage), Isc is the short circuit current (short circuit current), FF is the fill factor (fillfactor), Eta is the conversion efficiency (efficientratio), the results are as follows:

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Abstract

The invention discloses a surface treatment method suitable for a silicon wafer of a solar cell, and the method comprises the following steps: carrying out the laser processing of the surface of the silicon wafer, and the laser processing being used for reducing the reflectivity of the surface of the silicon wafer; and etching the front surface of the silicon wafer after the laser treatment, wherein the etching is used for removing molten silicon generated on the surface of the silicon wafer after the laser treatment. The invention discloses a surface treatment method suitable for a silicon wafer of a solar cell. According to the surface treatment method, regular punching treatment is carried out on the surface of an original silicon wafer through a laser technology, effective reducing surface reflectance. The silicon wafer subjected to laser treatment is etched to remove the composite layer on the surface of the silicon wafer. According to the solar cell prepared from the etched silicon wafer, the advantage of reflectivity is further reflected in the aspect of electrical properties, various electrical properties of the silicon wafer are obviously improved, the conversion efficiency of the solar cell is effectively improved under the condition that the advantage of low reflection is kept, and the solar cell has good application and popularization prospects.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for surface treatment of silicon wafers suitable for solar cells. Background technique [0002] Solar power generation technology is a new energy technology that converts light into electricity based on the "photovoltaic effect" of semiconductors, and is favored by everyone because of its clean, renewable, and wide application range. core components. [0003] The principle of solar cells is the "photovoltaic" effect. The ratio of incident light directly affects the output efficiency of the cell. Therefore, reducing the reflectivity of the cell surface is the most direct way to improve the conversion efficiency of the cell. The conventional anti-reflection process is based on silicon Texture is made on the surface of the chip by chemical etching, but the technology is very mature at present, and there is basically no room for further reducing the reflectivity. Cont...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0236B23K26/402B23K26/382B23K26/362B23K103/00
CPCH01L31/02363B23K26/362B23K26/382B23K26/402B23K2103/50Y02E10/50
Inventor 丁建明袁地春崔俊虎崔钟亨
Owner HANWHA SOLARONE QIDONG