Semiconductor device and forming method thereof

Abstract

The invention discloses a semiconductor device and a forming method thereof. The semiconductor device comprises a substrate, a plurality of first patterns and a plurality of second patterns. The plurality of first patterns and the plurality of second patterns are arranged on the substrate, are parallel to each other and are alternately arranged along a first direction. The plurality of first patterns and the plurality of second patterns are respectively provided with first ends and second ends which are opposite; the first end of each first pattern is provided with a first protruding part, thesecond end of each second pattern is provided with a second protruding part, the first protruding parts extend in the second direction, the second protruding parts extend in the third direction opposite to the second direction, and the second direction and the third direction are different from the first direction. Therefore, according to the invention, the self-aligned double patterning manufacturing process can be matched with the patterning mask layer to form a specific pattern which is relatively dense in layout and relatively small in size, so that the subsequent assembly manufacturing process is facilitated.

Description

technical field [0001] The present invention relates to a semiconductor device and its forming method, in particular to a semiconductor storage device and its forming method. Background technique [0002] In the semiconductor manufacturing process, the manufacture of some microstructures requires the use of photolithography and etching in appropriate substrates or material layers such as semiconductor substrates / film layers, dielectric material layers, or metal material layers to form microstructures with Tiny patterns of precise dimensions. For this purpose, in conventional semiconductor technology, a mask layer (masklayer) is formed on top of the target material layer, so that these tiny patterns are first formed / defined in the mask layer, and then the patterns are transferred to the target film Floor. Generally speaking, the mask layer is, for example, a patterned photoresist layer formed by a photolithography process, and / or a patterned mask layer formed using the patt...

AI Technical Summary

Problems solved by technology

[0003] With the complexity of integrated circuits, the size of these tiny patterns is continuously reduced and the structure is constantly changing. Therefore, the equipment used to generate feature patterns must meet the strict requirements of manufacturing process resolution and overlay accuracy. , the single patterning method can no longer meet the resolution requirements or manufacturing process requirements for manufacturing micro-linewidth patterns

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