Regeneration method of silicon electrode part of semiconductor equipment etching device

Abstract

The invention relates to the technical field of semiconductors. The regeneration method of a silicon electrode part of a semiconductor equipment etching device comprises the following steps: (1) dry ice sand blasting; (2) soaking in hot water; (3) soaking in an organic solution, and washing with pure water to remove residual liquid medicine; the organic solvent being selected from at least one ofethanol, isopropanol and acetone; (4) etching with a mixed acid solution, and washing with pure water to remove residual liquid medicine; (5) etching with an alkaline solution, and washing with pure water; and (6) performing ultrasonic cleaning. By means of the method, the deposition film layer on the surface of the silicon electrode is rapidly removed, the etching time of the exposed silicon substrate after the deposition film layer is removed is consistent, the etching time of the silicon substrate is greatly shortened, the uneven or rough phenomenon caused by uneven etching of the surface of the silicon substrate is avoided, and recycling of the silicon electrode is achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a cleaning method. Background technique [0002] In the manufacturing process of semiconductor devices, a plasma etching device is used to etch the surface of a wafer. A silicon electrode plate made of single crystal silicon or polycrystalline silicon is used inside the reaction chamber of the plasma etching apparatus. Due to the difference in device structure and silicon wafer size, there are different types of silicon electrode structures, collectively referred to as silicon electrodes. [0003] During the plasma etching process, the surface of the above-mentioned silicon electrode plate is exposed to plasma and etching gas and is consumed, and particles are generated, which may contaminate the wafer. Many other components are disposed inside the reaction chamber of the plasma etching device, and these components are also etched by plasma and etching gas to generate pa...

AI Technical Summary

Problems solved by technology

When the thickness difference of the deposited film is large, the thick deposited film is removed by prolonging the etching time, and the silicon substrate where the deposited film is thinner will continue to be etched for a long time after the deposited film is completely removed. The etching time of the silicon substrate is longer, which may easily cause the surface of the silicon substrate to be uneven or rough

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