Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Seed crystal support and silicon carbide single crystal growth method

A technology of seed crystal and thermal conductive layer, applied in the field of silicon carbide crystal preparation, can solve problems such as single crystal growth multi-nucleation phenomenon

Pending Publication Date: 2020-11-10
广州南砂晶圆半导体技术有限公司
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In the embodiment of the present invention, a seed crystal support and a silicon carbide single crystal growth method are provided to solve the problem of multi-core phenomenon in single crystal growth in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Seed crystal support and silicon carbide single crystal growth method
  • Seed crystal support and silicon carbide single crystal growth method
  • Seed crystal support and silicon carbide single crystal growth method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] figure 1 A schematic diagram of the basic structure of a seed crystal holder provided in the embodiment of the present application. figure 2 for figure 1 Schematic diagram of the upper surface structure of the seed holder in . Such as figure 1 with 2 As shown, the seed crystal holder includes a graphite seed crystal holder base 10, wherein a heat conduction layer 20 is provided in the central area of ​​the side of the seed crystal holder base 10 for bonding the seed crystal, specifically, the heat conduction layer 20 is The heat conduction film structure provided on the surface of the seed crystal support base 10, the heat conduction film includes a single-layer film structure or a multi-layer film structure. At the same time, it is required that the heat conduction layer 20 and the seed crystal support base 10 have a certain thermal conductivity difference, and the thermal conductivity of the material of the heat conduction layer 20 is greater than that of the see...

Embodiment 2

[0045] Since the larger the surface area of ​​the thermal conduction layer 20 on the seed crystal support substrate 10 is, the more obvious the effect of regulating the temperature field on the surface of the seed crystal is, but the larger the area, the greater the number of nucleation in the region will increase. Therefore, on the basis of the first embodiment, this embodiment also provides another seed crystal holder.

[0046] Figure 4 A schematic diagram of the basic structure of another seed crystal holder provided in the embodiment of the present application. Such as Figure 4 As shown, the seed crystal holder provided in this example includes a seed crystal holder base 10, and a groove is opened in the central area of ​​one side of the seed crystal holder base 10 for bonding the seed crystal, and the thermal conduction layer 20 is filled in the groove. At the same time, it is required that the heat conduction layer 20 and the seed crystal support base 10 have a certa...

Embodiment 3

[0051] In the above-mentioned embodiments, the thermal conduction layer 20 mainly dissipates heat with its surrounding crystal support base and adhesive through heat conduction to realize the purpose of regulating its temperature field. Compared with other areas of the seed crystal, the temperature difference is larger. This embodiment provides another seed crystal holder on the basis of the first and second embodiments above.

[0052] Figure 5 A schematic diagram of the basic structure of another seed crystal holder provided in the embodiment of the present application. Such as Figure 5 As shown, the seed crystal holder provided in this example includes a seed crystal holder base 10 , and a through hole is opened in the central area of ​​the seed crystal holder base 10 , and the heat conduction layer 20 is filled in the through hole. At the same time, it is required that the heat conduction layer 20 and the seed crystal support base 10 have a certain thermal conductivity...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a seed crystal support and a silicon carbide single crystal growth method. The method comprises the steps: arranging a heat conduction layer in the central area of a seed crystal support substrate, wherein the heat conductivity of the heat conduction layer is greater than that of the seed crystal support substrate. When SiC seed crystals are bonded on the seed crystal support for single crystal growth, the heat conductivity of the heat conduction layer in the central region of the seed crystal support is greater than that of the graphite seed crystal support substrate, so that the surface temperature of the seed crystals corresponding to the central region is lower than that of other regions of the seed crystals, the concentration of corresponding growth components is high, and the degree of supersaturation is high; when the supersaturation reaches the critical supersaturation degree, the nucleation begins; the temperature of other areas on the surface of the seed crystal is higher, so the critical supersaturation degree cannot be reached, and spontaneous nucleation cannot be realized. Therefore, the crystal nucleus formed in the central region can slowly grow by taking the crystal nucleus as the center, the advantages of the central crystal nucleus are established, and the silicon carbide single crystal is further obtained. The seed crystal surface temperature field is modulated through the heat conduction layer, the nucleation number is reduced, and the SiC crystal quality is improved.

Description

technical field [0001] The present disclosure relates to the technical field of silicon carbide crystal preparation, in particular to a seed crystal holder and a method for growing a silicon carbide single crystal. Background technique [0002] Silicon carbide (SiC), as the third-generation wide-bandgap semiconductor material developed after Si and GaAs, has excellent properties such as large bandgap, high critical breakdown electric field strength, high thermal conductivity, and good chemical stability. Therefore, the SiC single crystal material and device industry has become a strategic industry in the high-tech field, which has set off a climax of SiC device research all over the world. Among them, large-sized SiC wafers can effectively improve the production efficiency of SiC devices, greatly reduce the cost of SiC devices, and are more conducive to the promotion of the practicality of silicon carbide single crystals. For example, the widespread realization of 150mm dia...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/00C30B29/36
CPCC30B23/00C30B29/36
Inventor 杨祥龙徐现刚陈秀芳胡小波于国建
Owner 广州南砂晶圆半导体技术有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com