Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for exciting polaritons of two-dimensional Van der Waals material

A polariton, chemical vapor deposition technology, applied in electrical components, antennas and other directions, can solve the problem of difficult excitation of polariton

Active Publication Date: 2020-11-13
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA +1
View PDF10 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the transverse optical phonons and longitudinal optical phonons in monolayer hexagonal boron nitride will degenerate, and there is no remaining ray band, and its polaritons are difficult to be excited

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for exciting polaritons of two-dimensional Van der Waals material
  • Method for exciting polaritons of two-dimensional Van der Waals material
  • Method for exciting polaritons of two-dimensional Van der Waals material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] This embodiment provides a method for exciting a single-layer hexagonal boron nitride polariton, and the method includes the following steps:

[0049] The single-layer hexagonal boron nitride is irradiated with 60keV high-energy electrons to realize the excitation of the single-layer hexagonal boron nitride polaritons.

[0050] Using 60keV high-energy electrons to irradiate a single layer of hexagonal boron nitride, ultra-high-resolution images can be obtained.

[0051] Moreover, due to the very short wavelength of high-energy electrons, higher momentum compensation can be improved. The momentum compensation provided when irradiating monolayer hexagonal boron nitride can obtain monolayer hexagonal boron nitride signals in a wide momentum range, so it can efficiently excite monolayer Phonon polaritons in hexagonal boron nitride.

Embodiment 2

[0053] This embodiment provides a method for exciting multilayer hexagonal boron nitride polaritons, the method comprising the following steps:

[0054] The multilayer hexagonal boron nitride is irradiated with high-energy electrons of 60 keV to realize the excitation of polaritons of the multilayer hexagonal boron nitride, and the thickness of the multilayer hexagonal boron nitride is 10 nm.

[0055] Using 60keV high-energy electrons to irradiate multi-layer hexagonal boron nitride, ultra-high-resolution images can be obtained.

[0056] Moreover, due to the very short wavelength of high-energy electrons, higher momentum compensation can be improved, and the momentum compensation provided when irradiating multilayer hexagonal boron nitride can obtain multilayer hexagonal boron nitride signals in a wide momentum range, so it can efficiently excite multilayer Phonon polaritons in hexagonal boron nitride.

Embodiment 3

[0058] This embodiment provides a method for exciting a single-layer hexagonal boron nitride polariton, and the method includes the following methods:

[0059] The single-layer hexagonal boron nitride prepared by the chemical vapor deposition method is placed on a copper substrate, and the copper substrate is evenly covered with square through holes, the side length of the square through holes is 100 μm, and a carbon support film is arranged in the through holes , the surface of the carbon support film is provided with a support hole with an equivalent diameter of 2 μm, and the air in the support hole makes the monolayer hexagonal boron nitride in a suspended state in the support hole; then use 60keV high-energy electrons to irradiate the single layer of the suspended part A layer of hexagonal boron nitride is used to realize the excitation of polaritons in a single layer of hexagonal boron nitride.

[0060] The electron energy loss spectrum when irradiating a single layer of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Widthaaaaaaaaaa
Lengthaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for exciting polaritons of a two-dimensional Van der Waals material. The method comprises the steps of irradiating the two-dimensional Van der Waals material by usinghigh-energy electrons, and achieving the excitation of the polaritons of the two-dimensional Van der Waals material. The method provides ultrahigh momentum compensation and ultrahigh spatial resolution by utilizing the advantage of short wavelength of high-energy electrons, so that surface electromagnetic waves, namely, polaritons, are induced to be generated on the two-dimensional Van der Waalsmaterial by virtue of an electromagnetic field radiated by electrons. According to the method, the polaritons of the multi-layer two-dimensional Van der Waals material can be effectively excited, andthe single-layer two-dimensional Van der Waals material can also be effectively excited, so that a basis can be provided for research of polaritons of the two-dimensional Van der Waals material, exploration of polaritons and quantum confinement effects in a new material is facilitated, and a theoretical basis can also be provided for application of the two-dimensional Van der Waals material to small photonics devices.

Description

technical field [0001] The invention belongs to the technical field of electron excitation, and relates to a method for exciting material polaritons, in particular to a method for exciting two-dimensional van der Waals material polaritons. Background technique [0002] Two-dimensional van der Waals materials are materials formed by at least one layer of two-dimensional crystals through the Van der Waals interaction force. This material is easy to construct new optical devices by mechanical exfoliation and micro-nano processing. Graphene, transition metal dichalcogenides, etc. Compounds and hexagonal boron nitride are common two-dimensional van der Waals materials. [0003] Two-dimensional van der Waals materials have abundant polariton forms, and these polaritons can confine the light field in their own space on the surface of two-dimensional van der Waals materials, thereby forming a surface electromagnetic wave with a high compression ratio, which is a great contribution t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01Q15/24H01Q15/00
CPCH01Q15/24H01Q15/00
Inventor 戴庆郭相东杨晓霞高鹏李宁
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com