Color detection system based on palladium diselenide/ultrathin silicon/palladium diselenide Schottky junction and preparation method thereof
A detection system and Schottky junction technology, applied in the field of color detection system and its preparation, can solve the problems of narrow research scope, limited research angle, hindering wide application, etc., achieving high accuracy and repeatability, simple preparation process, low cost effect
Active Publication Date: 2020-11-17
HEFEI UNIV OF TECH
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Problems solved by technology
At present, photodetectors composed of a single ultra-thin silicon wafer are widely studied. The research angle is too limited and the research scope is too narrow, which restricts the further development and wide application of silicon-based photodetectors.
On the other hand, a single photodetector can only detect optical signals, but cannot identify the wavelength of light, which seriously hinders its wide application in scientific research, industrial production and people's lives.
Method used
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Embodiment 1
[0030] Such as figure 1 As shown, the present embodiment is based on the color detection system of palladium diselenide / ultra-thin silicon / palladium diselenide Schottky junction, including a glass substrate 1, and two color detectors are arranged symmetrically on the upper and lower surfaces of the glass substrate 1. detection unit;
[0031] The color detection unit includes an n-type ultra-thin silicon wafer 2 fixed on the surface of a glass substrate, on which a pair of palladium diselenide thin films 3 are laid; one side of the two palladium diselenide thin films 3 Respectively beyond the region of the n-type ultra-thin silicon wafer 2, on the glass substrate 1, and a palladium diselenide contact electrode 4 is provided in the region beyond it; in the color detection unit, two palladium diselenide thin films and n -Type ultra-thin silicon wafer forms a metal-semiconductor-metal Schottky junction.
[0032] Specifically, in this embodiment: the thickness of the glass substr...
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Abstract
The invention discloses a color detection system based on a palladium diselenide / ultra-thin silicon / palladium diselenide Schottky junction and a preparation method thereof. A pair of color detection units of a metal semiconductor metal Schottky junction formed by two palladium diselenide films and an n-type ultra-thin silicon wafer are symmetrically arranged on the upper surface and the lower surface of a glass substrate. The detectable wavelength range of the color detection system comprises 460-810 nm, the whole visible light area is crossed, a part of near-infrared band is involved, and thesystem has the advantages of being high in accuracy and repeatability.
Description
technical field [0001] The invention belongs to the technical field of photoelectric detection, and in particular relates to a color detection system and a preparation method thereof. Background technique [0002] A photodetector is an optoelectronic device that converts light signals into electrical signals through the photoelectric effect. Its essence is that the conductivity of light-absorbing materials changes due to the action of light radiation. It is widely used in civilian or military fields such as ray measurement and detection, industrial automation control, missile guidance, and night vision technology. According to the application range of detectors, photodetectors can be divided into ultraviolet photodetectors (wavelength 10-400nm), visible photodetectors (400-780nm) and infrared photodetectors (780nm-20μm). [0003] The color detector is a kind of photodetector, which can not only realize the detection of optical signals, but also realize the effective identif...
Claims
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IPC IPC(8): G01J9/00H01L31/108H01L31/18
CPCG01J9/00H01L31/1085H01L31/18Y02P70/50
Inventor 罗林保付灿李家祥王俊杰
Owner HEFEI UNIV OF TECH