Method for in-situ growth of two-dimensional MOFs film
A film and solution technology, applied in the field of materials, can solve the problems such as the difficulty in preparing MOFs films, and achieve the effects of controllable shape and thickness, simple equipment, and easy operation
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Embodiment 1
[0052] 1) First prepare 0.005mol / L CuSO 4 aqueous solution (A solution), and the HHTP aqueous solution (B solution) of 0.0025mol / L, the alkali solution used is the ammoniacal liquor that concentration is 0.01mol / L. Then the silicon dioxide disc was soaked in piranha solution for 10 h to make it super-hydrophilic.
[0053] 2) Two quartz discs are stacked and immersed in solution A for 1 h. It was then transferred to a hot plate and heated at 60 °C for 30 min to remove moisture. Further immerse the silicon dioxide disk into solution B for 1 h. It was then transferred to a hot stage and heated at 60 °C for 70 min.
[0054] 3) Changing the shape, size and number of cycles of silicon dioxide can achieve the purpose of regulating MOFs thin films.
[0055] figure 1 It is the cross-sectional SEM photo of the MOF thin film of Example 1 cycled for different times. (a) 20 times, (b) 30 times, (c) 40 times, (d) 50 times;
[0056] figure 2 It is the optical photograph of the MOFs ...
Embodiment 2
[0070] 1) First prepare 0.01mol / L CuCl 2 Aqueous solution (A solution), and 0.005mol / L HHTP aqueous solution (B solution), the alkali solution used is the sodium hydroxide aqueous solution that concentration is 0.2mol / L. Then the silicon wafer was treated with ultraviolet ozone lamp for 50min to make it super-hydrophilic.
[0071] 2) Two silicon wafers are stacked and immersed in solution A for 2 hours. Then it was transferred to a hot plate and heated at 80 °C for 30 min to remove moisture. Further immerse the silicon wafer in solution B for 2 h. It was then transferred to a hot plate and heated at 80 °C for 30 min.
[0072] 3) According to the above steps, cycle 50 times to obtain uniform Cu on the silicon wafer 2 (TCPP) film.
[0073] Image 6 It is embodiment 2 to prepare two-dimensional Cu 2 Optical photographs of (TCPP) films. (a) Photo of 4-inch silicon wafer, (b) Cu grown on 4-inch silicon wafer 2 Photo of (TCPP)MOF film. It can be seen from the figure that t...
Embodiment 3
[0075] 1) First prepare 0.05mol / L CuCl 2 aqueous solution (A solution), and 0.025mol / L HHTP aqueous solution (B solution), the alkali solution used is a potassium hydroxide aqueous solution with a concentration of 0.05mol / L. then use O 2 Plasma treatment of 100s sapphire flakes renders them superhydrophilic.
[0076] 2) Two sapphires are stacked and submerged in solution A for 1 hour. It was then transferred to a hot plate and heated at 90 °C for 30 min to remove moisture. Further immerse the sapphire piece in solution B for 1 h. It was then transferred to a hot plate and heated at 90 °C for 30 min.
[0077] 3) According to the above steps, cycle 50 times to obtain uniform Cu on the sapphire sheet 2 (TCPP) film.
[0078] Figure 7 It is embodiment 3 to prepare two-dimensional Cu 2 Optical photographs of (TCPP) films. (a) Photo of 4-inch sapphire, (b) Cu grown on 4-inch sapphire 2 Photo of (TCPP)MOF film. It can be seen from the figure that the surface of the MOF fil...
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