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An esd protection device

A technology for ESD protection and devices, applied in the direction of semiconductor devices, electric solid devices, electrical components, etc., can solve the problems of small area and high performance, achieve low on-resistance, optimize electric field distribution, and improve the effect of ESD protection ability

Active Publication Date: 2022-04-08
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention provides a novel ESD protection device for solving the contradiction between the small area and high performance of the existing ESD devices

Method used

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Embodiment Construction

[0016] Below in conjunction with accompanying drawing, describe technical scheme of the present invention in detail:

[0017] Such as figure 2 As shown, the ESD protection device of the present invention includes a P-type substrate 201, an N-type epitaxial layer 202, a P-type heavily doped region 203, an N-type heavily doped region 204, an isolation dielectric layer 205, an anode metal layer 206, and a cathode Metal layer 207 , P-type heavily doped diffusion region 209 , P-type heavily doped trench region 210 , N-type heavily doped diffused region 211 , and N-type heavily doped trench region 212 . The N-type epitaxial layer 202 is formed on the P-type substrate 201; the P-type heavily doped region 203 and the N-type heavily doped region 204 are located on the inner upper surface of the N-type epitaxial layer 202, and pass through the anode metal layer 206 is shorted; the P-type heavily doped trench region 210 and the N-type heavily doped trench region 212 are located on the i...

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Abstract

The invention belongs to the technical field of power semiconductors and relates to an ESD protection device. Compared with the traditional lateral SCR, the present invention optimizes the electric field distribution in the body, increases the overcurrent area in the body, thereby increasing the overcurrent capability of the device, improving the ESD protection capability of the device, and at the same time through the deep groove structure , which reduces the cross-spreading of the device and can achieve a higher sustain voltage under the same area. The invention not only makes full use of the characteristics of the strong discharge capacity of the SCR structure, but also realizes a higher sustaining voltage of the SCR in the same area through the deep groove structure, and can realize ESD protection performances such as high sustaining voltage, low on-resistance, and strong robustness. .

Description

technical field [0001] The invention belongs to the technical field of power semiconductors, and in particular relates to an ESD protection device. Background technique [0002] Electro-static discharge (ESD) refers to the ultra-fast discharge phenomenon in which electrostatic charges are transferred between two media with different electrostatic potentials. When discharging, its speed is often on the order of nanoseconds and accompanied by a very large current. Today, with the rapid development of integrated circuits, the size of chips continues to decrease. The operating voltage of many consumer electronic products is getting lower and lower. In addition, due to the miniaturization of the motherboard area, consumer electronic devices are also more sensitive to electrostatic discharge. For example, laptops, mobile phones, hard drives and other electronic products are extremely vulnerable to electrostatic discharge due to frequent contact with the human body. If no suitabl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02H01L29/06H01L29/74
CPCH01L27/0262H01L27/0255H01L29/7412H01L29/0684H01L29/0615
Inventor 李泽宏程然王志明
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA