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Semiconductor light-emitting element and method for manufacturing same

A technology of light-emitting components and manufacturing methods, which can be applied to semiconductor devices, electrical components, circuits, etc., and can solve the problems of increasing luminous output and the like

Pending Publication Date: 2020-11-20
DOWA ELECTRONICS MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, in a light-emitting element of a III-V compound semiconductor system including In and P disposed on an InP substrate, the current path is concentrated directly under the electrode, so there is a limit to increasing the light-emitting output.

Method used

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  • Semiconductor light-emitting element and method for manufacturing same
  • Semiconductor light-emitting element and method for manufacturing same
  • Semiconductor light-emitting element and method for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0164] Hereinafter, although an Example demonstrates this invention in more detail, this invention is not limited to the following Example at all. according to Figure 3 ~ Figure 6 , Figure 9 The semiconductor light-emitting device of Example 1 was produced according to the flow chart shown. details as follows.

[0165] First, on the (100) plane of the n-type InP substrate, n-type In 0.57 Ga 0.43 As etching barrier layer (20nm), n-type InP cladding layer (thickness: 3.5μm), i-type InP spacer layer (thickness: 300nm), semiconductor light-emitting layer with quantum well structure with emission wavelength of 1300nm (total 130nm), i-type InP spacer layer (thickness: 300nm), p-type InP cladding layer (thickness: 4.8μm), p-type In 0.8 Ga 0.20 As 0.5 P 0.5 Cap layer (thickness: 50nm), p-type In 0.57 Ga 0.43 As contact layer (thickness: 100 nm). It should be noted that when forming a semiconductor light-emitting layer with a quantum well structure, In 0.73 Ga 0.27 As 0...

Embodiment 2、 Embodiment 3

[0175] The semiconductor layer between the elements (width 60 μm) was removed by mesa etching in Example 1, and after forming the dicing line, plasma CVD was used to cover the roughness except for the bonding region (central circular portion) of the top surface electrode. SiO is formed on the n-type InP cladding after surface treatment and on the side of the element 2 Protective film, make the semiconductor light-emitting device of embodiment 2 and embodiment 3. Only to SiO when making embodiment 2,3 2 The formation time of protective film is adjusted, and the result embodiment 2, the SiO in embodiment 3 2 The thicknesses of the protective films were 215 nm and 645 nm, respectively.

Embodiment 4～7

[0177] The semiconductor light emitting elements of Examples 4 to 7 were manufactured in the same manner as in Example 1 except that the etching time of hydrochloric acid-acetic acid system in the roughening treatment in Example 1 was changed to control the surface roughness.

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Abstract

Provided is a semiconductor light-emitting element with which it is possible to mitigate multi-peaking in an emission spectrum to obtain a single peak. In the semiconductor light-emitting element according to the present invention, a reflective layer, a first conductivity-type cladding layer comprising InGaAsP containing at least In and P, a semiconductor light-emitting layer having an emission center wavelength of 1000-2200 nm, and a second conductivity-type cladding layer comprising InGaAsP containing at least In and P, are sequentially provided on a substrate. The second conductivity-type cladding layer is the light extraction side. The surface of the light extraction surface of the second conductivity-type cladding layer is a rough surface having a surface roughness Ra of 0.03 um or above and having a random relief pattern.

Description

technical field [0001] The invention relates to a semiconductor light emitting element and a manufacturing method thereof, in particular to an infrared light emitting semiconductor light emitting element. Background technique [0002] Conventionally, a semiconductor light emitting element that emits infrared light having a wavelength of 750 nm or longer in the infrared region is known. For example, semiconductor light-emitting elements that emit infrared light are widely used in sensors, gas analysis, surveillance cameras, and the like. [0003] When the emission wavelength of such a semiconductor light-emitting element is set to the near-infrared region of 1000 nm to 2200 nm, an InGaAsP-based Group III-V semiconductor containing In and P is generally used for the light-emitting layer. Conventionally, when epitaxially growing an InGaAsP-based III-V group semiconductor layer such as an InP layer, an InP substrate is used as a growth substrate in order to lattice match the gr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/22H01L33/10
CPCH01L33/30H01L33/22H01L33/10H01L33/44H01L33/0093H01L33/38H01L33/0062H01L33/46H01L33/56H01L2933/0016H01L2933/0025
Inventor 山本淳平生田哲也
Owner DOWA ELECTRONICS MATERIALS CO LTD
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