Silicon wafer thermal oxidation wet oxygen process

A technology of thermal oxidation and wet oxygen, which is applied in the manufacture of electrical components, semiconductor/solid-state devices, circuits, etc., can solve problems such as system pollution, poor process stability, and inability to accurately control the amount of wet oxygen steam, so as to solve potential safety hazards , Improve safety and reliability, and reduce the chance of pollution

Pending Publication Date: 2020-11-24
MCL ELECTRONICS MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, there are major disadvantages in the traditional two process methods: the first is the wet oxygen process by heating the bubbler bottle, firstly, the bubbler bottle is a closed pressure vessel during the heating process, and there are great safety hazards; secondly, the wet oxygen steam The electromagnetic valve core used in the road is made of metal material, which is easy to cause pollution to the system; in addition, the wet oxygen process of heating the bubbling bottle to evaporate water vapor cannot accurately control the amount of wet oxygen vapor, and the process stability is not good
Another wet oxygen process is to pass high-purity hydrogen and oxygen into the high-temperature quartz tube. Hydrogen is a flammable and explosive gas, and there is also a big safety hazard when placed on site.

Method used

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  • Silicon wafer thermal oxidation wet oxygen process
  • Silicon wafer thermal oxidation wet oxygen process
  • Silicon wafer thermal oxidation wet oxygen process

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Embodiment Construction

[0026] Specific examples are given below to further describe the technical solution of the present invention in a clear, complete and detailed manner. This embodiment is the best embodiment on the premise of the technical solution of the present invention, but the protection scope of the present invention is not limited to the following embodiments.

[0027] Such as figure 1 As shown, a silicon chip thermal oxidation wet oxygen process, the system used in the wet oxygen process includes an oxidation furnace tube 1, a gas nozzle 2, a metering pump 3, a nitrogen tank 4, an oxygen tank 5, the oxidation furnace tube The rear part of 1 is provided with connected gas nozzle 2 and metering pump 3;

[0028] The wet oxygen process includes the following steps:

[0029] S1: PFA high-purity water container 6 is set in the system;

[0030] S2: The PFA high-purity water container 6 is provided with an air inlet, and a high-efficiency filter is arranged in the air inlet, and other places...

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Abstract

The invention relates to a silicon wafer thermal oxidation wet oxygen process. The silicon wafer thermal oxidation wet oxygen process comprises a step and a method for determining the high-purity water filling amount in the silicon wafer thermal oxidation wet oxygen process, and specifically comprises the following steps of: arranging a metering pump and a gas nozzle at the rear part of a furnacetube of an oxidation furnace; injecting high-purity water into the gas nozzle through the metering pump; atomizing the injected high-purity water by the gas nozzle into water vapor, injecting the water vapor into the furnace tube of the oxidation furnace, and decomposing the water vapor into hydrogen and oxygen after entering the furnace tube of the oxidation furnace to react with a silicon waferto form an oxidation film on the surface of the silicon wafer; and controlling the growth thickness of the oxidation film on the surface of the silicon wafer by adjusting the amount of the pure waterinjected into the furnace tube of the oxidation furnace tube by the metering pump. According to the invention, the safety and reliability of the silicon wafer oxidation wet oxygen process are improved, the pollution introduction probability in the wet oxygen process is reduced, and the growth thickness of the oxidation film in the silicon wafer oxidation process can be accurately controlled by controlling the flow of pure water injected by the metering pump and the wet oxygen process time.

Description

technical field [0001] The invention belongs to the technical field of semiconductor silicon wafer production, and in particular relates to a silicon wafer thermal oxidation wet oxygen process. Background technique [0002] At present, the thermal oxidation of silicon wafers is to grow a high-quality oxide layer on the surface of silicon wafers, which is of great significance to the entire semiconductor integrated circuit manufacturing process. It is not only used as a masking layer for ion implantation or thermal diffusion, but also a passivation layer to ensure that the surface of the device is not affected by the surrounding atmosphere. It is not only an insulating layer for electrical isolation between devices, but also a MOS process and multi-layer metallization. The main component of a system that guarantees electrical isolation. Therefore, understanding the growth mechanism of the silicon oxide layer, controlling and repeating the method of growing a high-quality sil...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/316
CPCH01L21/02164H01L21/02238
Inventor 仝泉周晓飞田献立刘丽娟
Owner MCL ELECTRONICS MATERIALS
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