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Electrostatic chuck with renewable performance, and forming method thereof

An electrostatic chuck and regenerative performance technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve the problems of increased production cycle, scratched wafer surface, large particles, etc., so as to improve product life and inhibit wear , the effect of reducing production costs

Pending Publication Date: 2020-12-01
SUZHOU XINHUILIAN SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, on the other hand, when the ceramic electrostatic chuck is in contact with the wafer, it will rub against the wafer to cause loss and generate a large number of particles
[0004] In order to prevent particles from being produced on the surface of the wafer during the use of the electrostatic chuck, a material with a small friction coefficient with the wafer substrate and a high hardness is generally selected to form multiple protrusions on the upper surface of the dielectric layer, but the protrusions It is easy to scratch the surface of the wafer. If it is to be replaced frequently during use, it is necessary to stop the semiconductor manufacturing machine (vacuum machine). At this time, the increase in the production cycle will be inevitable. It is necessary to improve the service life of electrostatic chuck

Method used

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  • Electrostatic chuck with renewable performance, and forming method thereof
  • Electrostatic chuck with renewable performance, and forming method thereof
  • Electrostatic chuck with renewable performance, and forming method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] refer to Figure 1-3 As shown, this embodiment is an electrostatic chuck with regenerative performance, including a base 1, an insulating layer 2 disposed on the top of the base 1, a dielectric layer 3 disposed on the top of the insulating layer 2, and a clamp embedded in the insulating layer 2 and the electrode layer 4 between the dielectric layer 3, and several bosses 5 made of diamond-like film on the surface of the dielectric layer 3; several bosses 5 are surrounded by several different diameters along the center of the dielectric layer 3 The circular discontinuous distribution, the surface of the dielectric layer 3 is provided with a number of cooling grooves 6 distributed along different diameter directions, and the surface of several bosses 5 is provided with a wafer substrate 7 .

[0043] In this embodiment, the cooling grooves 6 are distributed on the surface of the dielectric layer 3 in a cross shape, and the cooling grooves 6 are filled with a cooling medium,...

Embodiment 2

[0051] refer to Figure 4 As shown, a method for forming an electrostatic chuck with renewable performance includes the following steps:

[0052] 1) The dielectric layer 3 on the surface of the electrostatic chuck is surface treated, and the surface cleaning treatment removes organic impurities and metal impurities on the surface of the electrostatic chuck, and an alkaline solution is selected, preferably a 5% concentration of ammonium hydroxide solution; the surface of the new electrostatic chuck is smooth and clean In this case, this step can be omitted;

[0053]2) Grinding, control the surface roughness of the electrostatic chuck to 0.3 μm, use 600 mesh sandpaper to polish for 2 minutes, measure the surface roughness of the dielectric layer with a surface roughness meter, if it does not meet the roughness range, increase the mesh number of the sandpaper, and repeat Grinding for 3 minutes until it meets the requirements; the grinding process is to ensure that the surface of...

Embodiment 3

[0060] refer to Figure 5 , Figure 6 , Figure 7 As shown, another electrostatic chuck forming method with reproducible performance includes the following steps:

[0061] 1) The dielectric layer 3 on the surface of the electrostatic chuck is subjected to surface treatment, the surface cleaning treatment removes organic impurities and metal impurities on the surface of the electrostatic chuck, and an alkaline solution is selected, preferably a 5% concentration of hydrogen peroxide solution; the surface of the new electrostatic chuck is smooth and clean In this case, this step can be omitted;

[0062] 2) Grinding, control the surface roughness of the electrostatic chuck to 0.5 μm, use 600 mesh sandpaper to polish for 3 minutes, measure the surface roughness of the dielectric layer with a surface roughness meter, if it does not meet the roughness range, increase the mesh number of the sandpaper, and repeat Grind for 2 minutes until it meets the requirements;

[0063] 3) Mark...

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Abstract

The invention discloses an electrostatic chuck with renewable performance, and a forming method thereof. The electrostatic chuck with the renewable performance comprises a base, an insulating layer arranged at the top of the base, a dielectric layer arranged at the top of the insulating layer, an electrode layer clamped and embedded between the insulating layer and the dielectric layer, and a plurality of bosses arranged on the surface of the dielectric layer and made of diamond-like carbon films, wherein the plurality of bosses are discontinuously distributed along the circle center of the dielectric layer in a plurality of circles with different diameters, the surface of the dielectric layer is provided with a plurality of cooling grooves distributed along different diameter directions,and the surfaces of the plurality of bosses are provided with wafer substrates. According to the invention, abrasion generated by direct contact between the wafer and the dielectric layer is suppressed, and generation of particles is suppressed.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to an electrostatic chuck with renewable performance and a forming method thereof. Background technique [0002] Semiconductor manufacturing machines have to go through multiple complex processes such as plasma etching, plasma implantation, thermal diffusion, and semiconductor packaging during semiconductor processing. Each process has its own dedicated production machine, so the semiconductor production process (handling and processing) ) clamping is particularly important. In the existing semiconductor handling and processing process, a mechanical arm equipped with an electrostatic chuck is mainly used to fix and move the semiconductor wafer. Electrostatic chucks only contact the back side of the semiconductor wafer during use. [0003] Traditional electrostatic chucks are mainly composed of metal or ceramics, and some electrostatic chucks are als...

Claims

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Application Information

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IPC IPC(8): H01L21/683
CPCH01L21/6831H01L21/6833
Inventor 杨冬野袁蕾
Owner SUZHOU XINHUILIAN SEMICON TECH CO LTD