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Processing device for growing gallium nitride epitaxial layer on patterned sapphire substrate

A technology for patterning sapphire and processing equipment, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of high cost, inability to quickly adjust the temperature conditions of the gallium nitride epitaxial layer grown on the sapphire substrate, and complex structure. Achieve the effect of low cost, simple structure, convenient and rapid adjustment

Active Publication Date: 2020-12-11
WUXI RES INST OF APPLIED TECH TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the deficiencies of the prior art, the present invention provides a processing device for growing gallium nitride epitaxial layers on patterned sapphire substrates, which solves the problem of existing devices for growing gallium nitride epitaxial layers on sapphire substrates. Complicated, high cost, unable to quickly adjust the temperature conditions for growing gallium nitride epitaxial layers on sapphire substrates

Method used

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  • Processing device for growing gallium nitride epitaxial layer on patterned sapphire substrate
  • Processing device for growing gallium nitride epitaxial layer on patterned sapphire substrate
  • Processing device for growing gallium nitride epitaxial layer on patterned sapphire substrate

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Embodiment 1

[0032]A processing device for growing gallium nitride epitaxial layers on a patterned sapphire substrate, comprising a processing box 1, a rotating motor 2 is fixedly connected to the bottom of the inner wall of the processing box 1, and a processing table is fixedly connected to the output end of the rotating motor 2 3. A clamping mechanism 4 is provided on the processing table 3, and a fixed plate 5 is fixedly connected above the inner walls of the processing box 1, and an adjustment mechanism 6 is arranged inside the processing box 1; the adjustment mechanism 6 includes a coolant storage tank 61 , the liquid pump 62 and the heating pipe 63, the input end of the liquid pump 62 is fixedly connected with an input pipe 64, one end of the input pipe 64 is fixedly connected with one side of the cooling liquid storage tank 61, and the output end of the liquid pump 62 is fixedly connected with an output pipe 65, one end of the output pipe 65 is fixedly connected with a nozzle 66, an...

Embodiment 2

[0034] A processing device for growing gallium nitride epitaxial layers on a patterned sapphire substrate, comprising a processing box 1, a rotating motor 2 is fixedly connected to the bottom of the inner wall of the processing box 1, and a processing table is fixedly connected to the output end of the rotating motor 2 3. A clamping mechanism 4 is provided on the processing table 3, and a fixed plate 5 is fixedly connected above the inner walls of the processing box 1, and an adjustment mechanism 6 is arranged inside the processing box 1; the adjustment mechanism 6 includes a coolant storage tank 61 , the liquid pump 62 and the heating pipe 63, the input end of the liquid pump 62 is fixedly connected with an input pipe 64, one end of the input pipe 64 is fixedly connected with one side of the cooling liquid storage tank 61, and the output end of the liquid pump 62 is fixedly connected with an output pipe 65, one end of the output pipe 65 is fixedly connected with a nozzle 66, a...

Embodiment 3

[0036] A processing device for growing gallium nitride epitaxial layers on a patterned sapphire substrate, comprising a processing box 1, a rotating motor 2 is fixedly connected to the bottom of the inner wall of the processing box 1, and a processing table is fixedly connected to the output end of the rotating motor 2 3. A clamping mechanism 4 is provided on the processing table 3, and a fixed plate 5 is fixedly connected above the inner walls of the processing box 1, and an adjustment mechanism 6 is arranged inside the processing box 1; the adjustment mechanism 6 includes a coolant storage tank 61 , the liquid pump 62 and the heating pipe 63, the input end of the liquid pump 62 is fixedly connected with an input pipe 64, one end of the input pipe 64 is fixedly connected with one side of the cooling liquid storage tank 61, and the output end of the liquid pump 62 is fixedly connected with an output pipe 65, one end of the output pipe 65 is fixedly connected with a nozzle 66, a...

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Abstract

The invention discloses a processing device for growing a gallium nitride epitaxial layer on a graphical sapphire substrate, an adjusting mechanism comprises a cooling liquid storage box, a liquid pump and a heating pipe, the input end of the liquid pump is fixedly connected with an input pipe, one end of the input pipe is fixedly connected with one side of the cooling liquid storage box, and theother end of the input pipe is fixedly connected with the heating pipe. The invention relates to the technical field of LED chip manufacturing. According to the processing device for growing the gallium nitride epitaxial layer on the patterned sapphire substrate, the cold environment generated by the cooling liquid storage box is transmitted to the spray head through the liquid pump, the low-temperature environment required by processing of growing the gallium nitride epitaxial layer on the sapphire substrate is met, the high-temperature environment is generated in the processing box body through the high temperature generated by the heating pipe, the high-temperature environment required by the processing of growing the gallium nitride epitaxial layer on the sapphire substrate is satisfied, the structure is simple, the cost is low, and the temperature condition of growing the gallium nitride epitaxial layer on the sapphire substrate can be conveniently and rapidly adjusted.

Description

technical field [0001] The invention relates to the technical field of LED chip production, in particular to a processing device for growing a gallium nitride epitaxial layer on a patterned sapphire substrate. Background technique [0002] Patterning the sapphire substrate, that is, growing a mask for dry etching on the sapphire substrate, engraving the mask with a pattern using a standard photolithography process, using ICP etching technology to etch the sapphire, and removing the mask, and then GaN material is grown on it, so that the vertical epitaxy of GaN material becomes lateral epitaxy. On the one hand, it can effectively reduce the dislocation density of the GaN epitaxial material, thereby reducing the non-radiative recombination of the active area, reducing the reverse leakage current, and improving the life of the LED; on the other hand, the light emitted by the active area passes through GaN and sapphire Multiple scattering at the interface of the substrate chang...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
CPCH01L33/007
Inventor 徐宏龚桦周德金黄伟吴超于理科夏泳
Owner WUXI RES INST OF APPLIED TECH TSINGHUA UNIV