Etching composition

A composition and etching technology, applied in the direction of surface etching compositions, chemical instruments and methods, etc., can solve the problems of enlarged size, misalignment of copper wires, high activity of fluorine ions, etc., and achieve excellent etching selectivity and stability High, high etch rate effect

Pending Publication Date: 2020-12-15
KANTO PPC
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  • Abstract
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Problems solved by technology

However, because fluorine ions will etch low-k materials, after the semiconductor process continues to shrink, fluorine ion microetching will increase the size of the originally designed trenches and holes, resulting in misalignment of copper wires, which will cause the components to fail. Opportunities become larger, which does not meet the requirements of advanced semiconductor processes, and the activity of fluorine ions is high, which makes it difficult to inhibit the corrosion of the underlying copper

Method used

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Embodiment Construction

[0024] Embodiments of the present invention are described below by means of specific embodiments, and those skilled in the art can easily understand the advantages and effects of the present invention from the content disclosed in this specification.

[0025] It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this specification are only used to match the content disclosed in the specification for the understanding and reading of those skilled in the art, and are not intended to limit the implementation of the present invention. Conditions, so there is no technical substantive meaning, any modification of structure, change of proportional relationship or adjustment of size shall still fall within the scope of the present invention without affecting the effect and purpose of the present invention. within the scope covered by the disclosed technical content. At the same time, words such as "one" and other words quoted in this specif...

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Abstract

The invention discloses an etching composition. Specifically, the invention relates to an etching composition for selectively etching a titanium nitride hard photomask, which comprises an alkaline compound, a chelating agent, a corrosion inhibitor and a solvent. The etching composition provided by the invention has excellent etching selectivity, can quickly remove titanium nitride (TiN) and dry etching residues, does not damage a lowk layer and a metal conductor layer, still has certain oxidation capacity, etching selectivity, pH value and other characteristics after being repeatedly used, andis suitable for being used in a recycling process.

Description

technical field [0001] The invention relates to an etching composition, in particular to an etching composition for selectively etching a titanium nitride (TiN) hard mask and residues. Background technique [0002] Due to market demand, the industry continues to invest in research to develop microelectronic devices with higher performance and lower energy consumption. With the evolution of the times, the market also requires smaller-sized microelectronic devices. Size reduction and integrated circuit (IC) reliability have become extremely important issues in the field of IC assembly technology. [0003] The dual damascene structure process is the process of back-stage metallization of microelectronic devices to form interconnects. Through holes and metal wires are made in a damascene manner, which is formed on the metal hard mask. On the low dielectric constant (low-k) material layer covering the metal conductor layer (such as cobalt or copper), etch the low-k layer accordi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/00
CPCC09K13/00
Inventor 吴柏衡李懿高桥秀树荻原绘里奈廖本男陈韵慈吕志鹏
Owner KANTO PPC
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