Additive for silicon wafer cleaning and application thereof

A silicon wafer cleaning and additive technology, which is applied in the direction of detergent compounding agent, detergent composition, cleaning method and utensils, can solve the problems of increasing the cost of pre-cleaning operation, increasing the cost of wastewater treatment, and large content, so as to achieve the improvement of battery The effect of improving chip yield, improving appearance cleanliness, and reducing dosage

Pending Publication Date: 2020-12-15
CHANGZHOU SHICHUANG ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to achieve the cleaning effect, it is necessary to use a large amount of hydrogen peroxide and alkali to clean the silicon wafer, which increases the cost of the pre-cleaning operation
Moreover, the alkali used in the cleaning solution is a strong alkali, and hydrogen peroxide is a strong oxidant, so the wastewater after cleaning needs to be treated in multiple steps. The content of hydrogen peroxide and alkali in the cleaning solution is large, which also increases the cost of wastewater treatment.

Method used

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  • Additive for silicon wafer cleaning and application thereof
  • Additive for silicon wafer cleaning and application thereof
  • Additive for silicon wafer cleaning and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Perform pre-cleaning operations on silicon wafers with fingerprints in the early stage of the texturing process. The specific steps include:

[0037] 1) Preparation of additives: 3.5% sodium benzoate, 1.2% chitosan, 0.5% fatty alcohol polyoxyethylene ether, 1.8% glycerol, and 2.2% polyvinyl alcohol were added to the remaining amount of water, mix evenly to make additives;

[0038] 2) Preparation of cleaning solution: add the additive prepared in step 1) to the alkaline solution, mix well to make a cleaning solution; the mass ratio of additive to alkaline solution is 0.5:100; the alkaline solution is an aqueous solution of sodium hydroxide, and the alkali Hydrogen peroxide is added into the solution; the alkaline solution contains 0.06wt% sodium hydroxide and 0.9wt% hydrogen peroxide;

[0039] 3) Put the silicon wafer into the cleaning solution prepared in step 2), and clean it at 60°C for 120s.

Embodiment 2

[0041] Perform pre-cleaning operations on silicon wafers with fingerprints in the early stage of the texturing process. The specific steps include:

[0042] 1) Preparation of additives: adding 5% sodium benzoate, 2% chitosan, 1% fatty alcohol polyoxyethylene ether, 3% glycerol, and 1% polyvinyl alcohol to the remaining amount of water, mix evenly to make additives;

[0043] 2) Preparation of cleaning solution: add the additive prepared in step 1) to the alkaline solution, mix well to make a cleaning solution; the mass ratio of the additive to the alkaline solution is 2:100; the alkaline solution is an aqueous solution of sodium hydroxide, and the alkaline Hydrogen peroxide is added into the solution; the alkaline solution contains 0.1wt% sodium hydroxide and 1.5wt% hydrogen peroxide;

[0044] 3) Put the silicon wafer into the cleaning solution prepared in step 2), and clean it at 68°C for 100s.

Embodiment 3

[0046] Perform pre-cleaning operations on silicon wafers with fingerprints in the early stage of the texturing process. The specific steps include:

[0047] 1) Preparation of additives: Add 2% sodium benzoate, 1% chitosan, 0.5% fatty alcohol polyoxyethylene ether, 1% glycerol, and 3% polyvinyl alcohol to the remaining amount of water, mix evenly to make additives;

[0048] 2) Preparation of cleaning solution: add the additive made in step 1) to the alkaline solution, mix well to make a cleaning solution; the mass ratio of additive to alkaline solution is 0.1:100; the alkaline solution is an aqueous solution of sodium hydroxide, and the alkali Hydrogen peroxide is added into the solution; the alkali solution contains 0.08wt% sodium hydroxide and 1wt% hydrogen peroxide;

[0049] 3) Put the silicon wafer into the cleaning solution prepared in step 2), and clean it at 68°C for 120s.

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Abstract

The invention discloses an additive for silicon wafer cleaning. The additive comprises the following components in percentage by mass: 2% to 5% of sodium benzoate, 1% to 2% of chitosan, 0.5% to 1% offatty alcohol-polyoxyethylene ether, 1% to 3% of glycerol, 1% to 3% of polyvinyl alcohol and the balance of water. When pre-cleaning operation is carried out at the front stage of the texturing process, the additive is added into a cleaning solution of a silicon wafer, so that the consumption of hydrogen peroxide and alkali in the cleaning solution can be reduced, the level of reducing the original consumption of hydrogen peroxide and alkali by 80% can be achieved in actual production, and the battery efficiency is slightly improved; and residual oil stains, finger prints, dust and other dirton the surface of the silicon wafer can be effectively removed, and the appearance cleanliness of the silicon wafer and the yield of battery pieces are improved.

Description

technical field [0001] The invention relates to the field of photovoltaics, in particular to an additive for cleaning silicon wafers and an application thereof. Background technique [0002] In the production process of solar cells, in order to improve the conversion efficiency of light, silicon wafers need to be textured, and in order to obtain silicon wafers with uniform appearance, clean and no dirt, and neatly arranged textured surfaces, it is necessary to carry out texturing in the early stage of the texturing process. The pre-cleaning operation, through the pre-cleaning operation, removes the remaining oil, dust, stick glue, finger prints and other substances that affect the texture of the silicon wafer surface. [0003] In the current pre-cleaning operation, the cleaning solution of the silicon wafer is generally an alkaline solution (such as sodium hydroxide solution) added with hydrogen peroxide. In order to achieve the cleaning effect, it is necessary to use a lar...

Claims

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Application Information

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IPC IPC(8): C11D1/72C11D3/20C11D3/22C11D3/37C11D3/04C11D11/00B08B3/08
CPCC11D1/72C11D3/2079C11D3/227C11D3/2065C11D3/3753C11D3/04C11D3/044B08B3/08C11D2111/22
Inventor 胡聿明杨洋章圆圆
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
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