Manufacturing method of thermopile sensor

A technology for thermopile sensors and manufacturing methods, which is applied in the field of manufacturing thermopile sensors, can solve problems such as device accuracy needs to be improved, and achieve the effects of shortening interconnection length, improving measurement accuracy, and avoiding collapse

Pending Publication Date: 2020-12-22
NINGBO SEMICON INT CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004]However, the device accuracy of exist

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  • Manufacturing method of thermopile sensor
  • Manufacturing method of thermopile sensor
  • Manufacturing method of thermopile sensor

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Embodiment Construction

[0018] The device precision of the existing thermopile sensor needs to be improved.

[0019] According to the analysis of the inventors, traditional thermopile sensors make thermocouple pairs by depositing polysilicon / metal on the dielectric film to sense temperature information, and then form a thermal insulation under the dielectric film by anisotropic wet etching of silicon on the back side. The cavity is used to increase the thermal resistance, and the thermocouple pair is electrically connected to the readout circuit formed on the side of the thermocouple pair, so as to realize the transmission of the induction signal. However, there is no substrate structure under the device formed by this method, and the heat in the heat-insulating cavity will still be lost in a certain form, so that the measurement accuracy of the thermopile sensor is not high.

[0020] In order to solve the above technical problems, an embodiment of the present invention provides a method for manufact...

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Abstract

The embodiment of the invention provides a manufacturing method of a thermopile sensor, which comprises the following steps: providing a thermopile structure plate and a circuit substrate, wherein thethermopile structure plate comprises a thermal radiation induction area, a thermopile structure is formed in the thermal radiation induction area, and the circuit substrate comprises a thermal radiation isolation area; forming a supporting structure on the circuit substrate, forming a thermal radiation isolation plate and a sacrificial structure which are longitudinally stacked from bottom to topin the supporting structure, wherein the thermal radiation isolation plate and the sacrificial structure at least cover the thermal radiation isolation area; bonding the thermopile structure plate onthe surface of one side of the circuit substrate, which is provided with the support structure, so that the thermal radiation induction region vertically corresponds to the thermal radiation isolation area; and removing the sacrificial structure, and forming a first cavity between the thermopile structure plate and the circuit substrate. The manufacturing method of the thermopile sensor can improve the measurement precision of the thermopile sensor.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a thermopile sensor. Background technique [0002] Thermopile sensor is a kind of temperature detection device, which realizes temperature detection by transforming the sensed infrared information into corresponding signal output according to certain rules. [0003] With the rapid development of microelectromechanical systems (MEMS) technology, miniaturized thermopile sensors based on MEMS micromachining technology are widely used in temperature measurement, gas sensing, optical imaging, etc. due to their small size and low price. field. [0004] However, the device accuracy of existing thermopile sensors needs to be improved. Contents of the invention [0005] The problem solved by the invention is to provide a manufacturing method of a thermopile sensor to improve the precision of the device. [0006] In order to solve the above problem...

Claims

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Application Information

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IPC IPC(8): H01L35/34B81C1/00G01J5/12
CPCB81C1/00238B81C1/00047B81C1/0069B81C1/00301G01J5/12G01J2005/123H10N10/01
Inventor 黄河
Owner NINGBO SEMICON INT CORP
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