A kind of nano-capacitor three-dimensional integrated structure and its manufacturing method
A nano-capacitor and three-dimensional integration technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as singleness and increase storage capacity, reduce interconnection resistance and energy loss, and increase capacitance density , the effect of reducing the electrical connection process steps
Active Publication Date: 2022-04-29
FUDAN UNIV +1
View PDF13 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, the high aspect ratio structures currently used in nanocapacitors are relatively single, which cannot increase the storage capacity to a greater extent, thus limiting nanocapacitors as effective energy buffer components
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0033]In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. It should be understood that the specific The examples are only used to explain the present invention, not to limit the present invention. The described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0034] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "upper", "lower", "vertical" and "horizontal" are based on the orientation or positional relations...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a nano capacitor three-dimensional integrated structure and a manufacturing method thereof. In the manufacturing method of the three-dimensional nanocapacitance integrated structure, a front trench and a back trench are respectively formed on the front and back sides of a low-resistance silicon substrate, and a first nanocapacitance structure and a second nanocapacitance structure are formed therein, and the front trench and the backside A through-silicon hole structure is formed between the trenches. The through-silicon via structure is directly electrically connected to the lower electrode of the first nanocapacitive structure and the second nanocapacitive structure, and the low-resistance silicon substrate is directly electrically connected to the upper electrode of the first nanocapacitive structure and the second nanocapacitive structure, which can shorten the interconnection line length, which is beneficial to reduce interconnection resistance and energy loss.
Description
technical field [0001] The invention belongs to the field of integrated circuit packaging, and in particular relates to a three-dimensional integrated structure of nanocapacitors and a manufacturing method thereof. Background technique [0002] Currently, batteries are still the main energy supply components for portable electronic devices. Although battery technology is constantly evolving, there is still a trade-off between battery capacity and volume and weight. Accordingly, some alternative power supply components with large capacity, light weight, and small size have been researched and developed, such as micro fuel cells, plastic solar cells, and energy harvesting systems. In all the cases mentioned above, an energy buffer system is usually required to maintain a continuous and steady energy output. For example, fuel cell systems are generally believed to have slower start-up times and lower kinetic energy. Therefore, a hybrid system in which the fuel cell provides ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/08H01L21/822
CPCH01L27/0805H01L21/8221
Inventor 朱宝陈琳孙清清张卫
Owner FUDAN UNIV