Ultrafast laser continuous splitting device and method
An ultra-fast laser and split technology, applied to fine working devices, working accessories, electrical components, etc., can solve the problems of limiting the potential of laser cold cracking technology and reducing processing efficiency, so as to improve cold cracking efficiency, reduce processing costs, cost reduction effect
Pending Publication Date: 2021-01-08
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology
The laser cold cracking technology of top irradiation requires polishing and grinding of materials, which reduces the processing efficiency and limits the potential of laser cold cracking technology
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[0028] The invention provides an ultrafast laser continuous splitting device, comprising: an ultrafast laser light source providing irradiation energy; a beam shaping coupling system, which is located on the laser output path of the ultrafast laser light source, and consists of a laser beam expander system and a laser Focusing system; three-dimensional displacement system, which is connected with the material, can control the movement direction, speed and trajectory of the material, thereby controlling the irradiation position and movement trajectory of the ultrafast laser pulse on the material; the controller, its output terminal Connected with the three-dimensional displacement system, it is used to control the movement direction, speed and trajectory of the three-dimensional displacement system.
[0029] The feature of the present invention is that the ultrafast laser is focused from the upper surface of the polishing material to a certain thickness away from the bottom for ...
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An ultrafast laser continuous splitting method comprises the following steps that laser of an ultrafast laser light source is focused to the position away from the bottom by a certain thickness from the polished upper surface of a material to be subjected to scanning machining, the scanning interval is controlled to be variable, and a modified layer is formed; the part below the modified layer iscracked from the modified layer through cold cracking, and the part is stripped from a main body of a material to be subjected to cold cracking; and the material to be subjected to cold cracking is moved downwards by one wafer thickness, in other words, an ultrafast laser focus point is moved upwards by one wafer thickness, the above machining process is repeated, and ultrafast laser continuous splitting is achieved. According to the method, the upper surface of the material only needs to be subjected to the processes such as polishing and grinding once, the processes of polishing, grinding and the like of the material are not needed in the continuous splitting process, and a high-quality wafer slice can be directly obtained through subsequent treatment after a cracking layer is formed atthe bottom of the material, so that the cold cracking efficiency is improved while the machining cost is reduced.
Description
technical field [0001] The invention relates to the technical field of laser splitting, in particular to an ultrafast laser continuous splitting device and method for superhard materials. Background technique [0002] The third-generation semiconductor materials represented by wide-bandgap compound semiconductors such as silicon carbide, diamond, and gallium carbide have complex growth processes and high material hardness, which increases the difficulty of semiconductor wafer processing and hinders the application of semiconductor devices. The traditional wafer processing technology adopts diamond wire or slurry-based sawing wire cutting process, which has long processing time and high cutting limit. At the same time, subsequent grinding and polishing are required, and the processing cost is always high. [0003] Laser cold cracking technology is a new type of non-contact laser processing technology for superhard materials. It uses the cold processing characteristics of high...
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IPC IPC(8): B28D5/00B28D7/00H01L21/78
CPCB28D5/0011B28D5/0064H01L21/78
Inventor 林学春何超建于海娟苗张旺韩世飞
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI