Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Thermopile infrared sensor with linear thermal resistance correction and preparation method thereof

A thermopile sensor, thermal resistance technology, applied in piezoelectric/electrostrictive/magnetostrictive devices, piezoelectric effect/electrostrictive or magnetostrictive motors, electrical radiation detectors, etc. Increase the workload of packaging and other issues to achieve the effect of improving sensitivity, improving overall accuracy, and increasing light reflection effect

Pending Publication Date: 2021-01-22
广州德芯半导体科技有限公司
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional method is to package another thermistor next to the thermopile chip. One is the increased workload of the package. In addition, the accuracy of the thermistor itself affects the accuracy of the overall temperature measurement. The package always has a distance away from the thermopile chip, which cannot fully represent the cold junction temperature of the thermopile chip

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thermopile infrared sensor with linear thermal resistance correction and preparation method thereof
  • Thermopile infrared sensor with linear thermal resistance correction and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] The thermopile sensor with linear thermal resistance correction of this embodiment includes a silicon substrate, SiO 2 Thin films, silicon nitride layers, polysilicon strips, SiO 2 Insulation layer, metal electrodes and linear metal RTD with SiO on silicon substrate in sequence 2 The thin film and the silicon nitride layer form a supporting film; the polysilicon strips are arranged on the upper surface of the silicon nitride layer, and the polysilicon strips are doped with B ions. SiO 2 The insulating layer covers the polysilicon strip, and the metal electrode penetrates the SiO above the polysilicon strip 2 The insulating layer is in contact with the polysilicon strip, the metal electrode and the polysilicon strip form a thermocouple, and a plurality of thermocouples form a thermopile, and the linear metal thermal resistance is set on the SiO 2 On the insulating layer and the silicon substrate, and the linear metal thermal resistance is located beside the thermopile...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a thermopile infrared sensor with linear thermal resistance correction and a preparation method thereof. By modifying the thermopile chip manufacturing process, a thermopile infrared sensor body part and a PT thermal resistor used for temperature correction are manufactured on the same substrate made of SI basic materials. The sensor is composed of a thermopile area and a linear metal thermal resistance compensation area. Compared with the prior art, the process for manufacturing the high-accuracy linear Pt resistor on the thermopile chip is achieved, meanwhile, the light reflection effect of a cold region of the chip is improved, more effective temperature difference is achieved, the sensitivity of the device is improved, and the overall accuracy of the device is improved.

Description

technical field [0001] The invention relates to the thermopile infrared sensor technology, in particular to the infrared thermopile sensor with linear metal thermal resistance correction. Background technique [0002] Infrared thermopile sensor is a detector that judges the thermal characteristics of an object by measuring the intensity of infrared radiation emitted by an object and outputting a differential voltage signal. It can be used for non-contact temperature measurement and can measure constant infrared radiation. It can be used in military or civilian applications; this kind of sensor can now be manufactured using semiconductor MEMS technology, even compatible with CMOS technology, and the size can be made very small, so a single sensor can be made on the Si base, or it can be made in the following The sensor array arranged in matrix has high cost performance. The thermopile unit manufactured by semiconductor MEMS technology is generally composed of several pairs o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B81B7/02B81C1/00G01J5/12
CPCB81B7/02B81C1/00015G01J5/12B81B2201/02
Inventor 汪民许玉方李朗汪洋
Owner 广州德芯半导体科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com