Thermopile infrared sensor with linear thermal resistance correction and preparation method thereof

A thermopile sensor, thermal resistance technology, applied in piezoelectric/electrostrictive/magnetostrictive devices, piezoelectric effect/electrostrictive or magnetostrictive motors, electrical radiation detectors, etc. Increase the workload of packaging and other issues to achieve the effect of improving sensitivity, improving overall accuracy, and increasing light reflection effect

Pending Publication Date: 2021-01-22
广州德芯半导体科技有限公司
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

The traditional method is to package another thermistor next to the thermopile chip. One is the increased workload of the package. In addition, the accuracy of the thermistor itself affects the accuracy of the overall temperature measurement. The package always has a distance away from the thermopile chip, which cannot fully represent the cold junction temperature of the thermopile chip

Method used

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  • Thermopile infrared sensor with linear thermal resistance correction and preparation method thereof
  • Thermopile infrared sensor with linear thermal resistance correction and preparation method thereof

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Embodiment 1

[0036] The thermopile sensor with linear thermal resistance correction of this embodiment includes a silicon substrate, SiO 2 Thin films, silicon nitride layers, polysilicon strips, SiO 2 Insulation layer, metal electrodes and linear metal RTD with SiO on silicon substrate in sequence 2 The thin film and the silicon nitride layer form a supporting film; the polysilicon strips are arranged on the upper surface of the silicon nitride layer, and the polysilicon strips are doped with B ions. SiO 2 The insulating layer covers the polysilicon strip, and the metal electrode penetrates the SiO above the polysilicon strip 2 The insulating layer is in contact with the polysilicon strip, the metal electrode and the polysilicon strip form a thermocouple, and a plurality of thermocouples form a thermopile, and the linear metal thermal resistance is set on the SiO 2 On the insulating layer and the silicon substrate, and the linear metal thermal resistance is located beside the thermopile...

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Abstract

The invention discloses a thermopile infrared sensor with linear thermal resistance correction and a preparation method thereof. By modifying the thermopile chip manufacturing process, a thermopile infrared sensor body part and a PT thermal resistor used for temperature correction are manufactured on the same substrate made of SI basic materials. The sensor is composed of a thermopile area and a linear metal thermal resistance compensation area. Compared with the prior art, the process for manufacturing the high-accuracy linear Pt resistor on the thermopile chip is achieved, meanwhile, the light reflection effect of a cold region of the chip is improved, more effective temperature difference is achieved, the sensitivity of the device is improved, and the overall accuracy of the device is improved.

Description

technical field [0001] The invention relates to the thermopile infrared sensor technology, in particular to the infrared thermopile sensor with linear metal thermal resistance correction. Background technique [0002] Infrared thermopile sensor is a detector that judges the thermal characteristics of an object by measuring the intensity of infrared radiation emitted by an object and outputting a differential voltage signal. It can be used for non-contact temperature measurement and can measure constant infrared radiation. It can be used in military or civilian applications; this kind of sensor can now be manufactured using semiconductor MEMS technology, even compatible with CMOS technology, and the size can be made very small, so a single sensor can be made on the Si base, or it can be made in the following The sensor array arranged in matrix has high cost performance. The thermopile unit manufactured by semiconductor MEMS technology is generally composed of several pairs o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B7/02B81C1/00G01J5/12
CPCB81B7/02B81C1/00015G01J5/12B81B2201/02
Inventor 汪民许玉方李朗汪洋
Owner 广州德芯半导体科技有限公司
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