Method for preparing ultra-nano diamond film

A diamond thin film, ultra-nano technology, applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve problems such as limiting the application of UNCD

Active Publication Date: 2021-01-29
曾一
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the general method of preparing UNCD is to use a microwave plasma device to prepare at a temperature above 800 ° C, and the temperature of 800 ° C is too high for some materials, thus limiting the application of UNCD

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing ultra-nano diamond film
  • Method for preparing ultra-nano diamond film
  • Method for preparing ultra-nano diamond film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] The present embodiment provides a kind of method for preparing ultra-nano-diamond film, it comprises the steps:

[0058] Substrate treatment: Select P-type Si (100) polished on one side as the substrate, place it in a mixed solution of diamond powder with a particle size of 5 μm and ethanol, and perform ultrasonic cleaning for 8 minutes to scratch the substrate;

[0059] Substrate cleaning: Put the treated substrate into acetone solution and ultrasonically clean it for 5 minutes;

[0060] Thin film deposition: place the cleaned substrate on the base platform made of Mo and send it into the vacuum chamber of the MWPCVD equipment, run the MWPCVD equipment, vacuumize the equipment to make it reach the background vacuum, and then inject the reaction gas, the reaction gas In, the volume ratio of each component CH 4 :Ar:CO:H 2 1:70:9:20; when the inside of the vacuum chamber is stable and the air pressure is kept at 1torr, turn on the microwave source, the microwave frequen...

Embodiment 2

[0062] The present embodiment provides a kind of method for preparing ultra-nano-diamond film, it comprises the steps:

[0063] Substrate treatment: Select P-type Si (100) polished on one side as the substrate, place it in a mixed solution of diamond powder with a particle size of 8 μm and ethanol, and perform ultrasonic cleaning for 15 minutes to scratch the substrate;

[0064] Substrate cleaning: Put the treated substrate into acetone solution and ultrasonically clean it for 15 minutes;

[0065] Thin film deposition: place the cleaned substrate on the pedestal made of Cu and send it into the vacuum chamber of the MWPCVD equipment, run the MWPCVD equipment, vacuum the equipment to make it reach the background vacuum, and then inject the reaction gas, the reaction gas In, the volume ratio of each component CH 4 :Ar:CO:H 2 It is 1.6:82:12.3:4.1; when the inside of the vacuum chamber is stable and the air pressure is kept at 2torr, the microwave source is turned on, the microw...

Embodiment 3

[0067] The present embodiment provides a kind of method for preparing ultra-nano-diamond film, it comprises the steps:

[0068] Substrate treatment: Select P-type Si (100) polished on one side as the substrate, place it in a mixed solution of diamond powder with a particle size of 7 μm and ethanol, and perform ultrasonic cleaning for 10 minutes to scratch the substrate;

[0069] Substrate cleaning: put the treated substrate into acetone solution and ultrasonically clean it for 10 minutes;

[0070] Thin film deposition: place the cleaned substrate on the base platform made of Mo and send it into the vacuum chamber of the MWPCVD equipment, run the MWPCVD equipment, vacuumize the equipment to make it reach the background vacuum, and then inject the reaction gas, the reaction gas In, the volume ratio of each component CH 4 :Ar:CO:H 2It is 1.5:73:11:14.5; when the inside of the vacuum chamber is stable and the air pressure is kept at 1.5torr, turn on the microwave source, the mic...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a method for preparing an ultra-nano diamond film, and relates to the field of diamond films. The method for preparing the ultra-nano diamond film includes the following steps of substrate treatment, substrate cleaning and film deposition. The whole method for preparing the ultra-nano diamond film is simple in process and high in preparation efficiency, and compared with a traditional preparation method, the method has the advantages that the temperature required by film deposition is reduced, so that the method can be more conveniently applied to industry and is convenient to use.

Description

technical field [0001] The invention relates to the technical field of diamond thin films, in particular to a method for preparing ultra-nano diamond thin films. Background technique [0002] UNCD (Ultra Nano Diamond) has attracted much attention because of its excellent properties. The crystal grains are small and the proportion of grain boundaries is high. In addition to inheriting the physical and chemical properties of diamond, it also has a small size effect. It plays an important role in electrochemistry, microelectromechanical systems (MEMS), biomedicine, acoustics, optics and other fields. The original UNCD was introduced by the Argonne National Laboratory in the United States under the plasma excited by argon 60 Obtained as a carbon source at 800°C. [0003] At present, the general method of preparing UNCD is to use a microwave plasma device to prepare at a temperature above 800 ° C, and the temperature of 800 ° C is too high for some materials, thus limiting th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/27C23C16/02
CPCC23C16/274C23C16/0227
Inventor 曾一
Owner 曾一
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap