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Near-infrared absorbing composition, near-infrared absorbing film and image sensor for solid-state imaging elements

A near-infrared and absorptive technology, applied in the direction of electric solid devices, optical components, electrical components, etc., can solve the problems of low absorption coefficient and insufficient absorption performance, and achieve the effect of excellent absorption characteristics

Active Publication Date: 2021-02-05
KONICA MINOLTA INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, in the optical filter provided above using a phosphate compound and a copper phosphate compound mainly composed of copper ions, it is found that the light absorption coefficient is not high, and the optical filter used in the optical sensitivity correction of the imaging type The absorption performance in the required wavelength region of 900 to 1100nm is not sufficient, so early improvement is required

Method used

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  • Near-infrared absorbing composition, near-infrared absorbing film and image sensor for solid-state imaging elements
  • Near-infrared absorbing composition, near-infrared absorbing film and image sensor for solid-state imaging elements
  • Near-infrared absorbing composition, near-infrared absorbing film and image sensor for solid-state imaging elements

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0239] "Preparation of Near-Infrared Absorbing Composition"

[0240] (Preparation of near-infrared absorbing composition 1)

[0241] Near-infrared-absorbing composition 1 was prepared according to the following method.

[0242] Mix 1.46g of copper acetate with 58.54g of tetrahydrofuran (abbreviation: THF) as a solvent, dissolve the copper acetate using an ultrasonic irradiation machine, perform a filtration operation to remove undissolved copper acetate, and prepare liquid A containing the solvent (THF).

[0243] Next, 4.0 g of THF was added to 2.0 g of PLYSURF A208F (trade name) manufactured by Daiichi Kogyo Pharmaceutical Co., Ltd., which is a compound having a structure represented by the general formula (1), and stirred to prepare liquid B.

[0244] Moreover, 0.016 g of phosphoric acid and 4.0 g of THF were added and stirred to 0.62 g of phosphoric acid esters, and C liquid was prepared.

[0245] Subsequently, while stirring liquid A, liquid B and liquid C were sequentia...

Embodiment 2

[0329] "Preparation of Near Infrared Absorbing Film"

[0330] To each of the near-infrared-absorbing compositions prepared in Example 1, polysiloxane silicone resin (KR-255, manufactured by Shin-Etsu Chemical Co., Ltd.) was added and stirred to prepare near-infrared-absorbing films. Coating solution. The prepared coating liquid was applied on the substrate by spin coating, and near-infrared absorptive films 1 to 44 were prepared.

[0331] Next, the near-infrared-absorbing film was subjected to predetermined heat treatment to cure the coating film, and near-infrared shielding filters 1 to 44 applicable to image sensors for solid-state imaging devices were prepared.

[0332] In the same manner as in Example 1, the visible light transmittance and the near infrared transmittance in the film state of each of the near-infrared ray shielding filters 1 to 44 prepared above were evaluated. As a result, it was confirmed that The same effect can also be obtained in the class.

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Abstract

The present invention addresses the problem of providing a near-infrared absorbing composition which exhibits excellent absorption characteristics in the near-infrared region, while having high dispersibility and high visible light transmittance; and a near-infrared absorbing film and an image sensor for solid-state imaging elements, each of which uses the near-infrared absorbing composition. Thenear-infrared absorbing composition according to the present invention contains a near-infrared absorbent and a solvent, and is characterized by containing, as the near-infrared absorbent, a compoundthat contains the component (A) and the component (B) described below, while having a structure represented by formula (I) in an amount within the range of 0.001-10% by mass. The component (A) is a component that is composed of a compound represented by general formula (1) or general formula (2), a compound represented by formula (I) and a copper ion, and the component (B) is a component that is composed of a compound represented by general formula (1) or general formula (2), a compound represented by formula (I) and a copper complex, formula (I): O=P-(OH)3.

Description

technical field [0001] The present invention relates to a near-infrared-absorbing composition, a near-infrared-absorbing film and an image sensor for a solid-state imaging device using the composition. More specifically, it relates to a near-infrared-absorbing composition having high dispersibility and high transmittance in the visible region and excellent absorption characteristics in the near-infrared region, and a near-infrared-absorbing film and An image sensor for a solid-state imaging device including the near-infrared absorption film. Background technique [0002] CCD (Charge Coupled Device) or CMOS (Complementary Metal Oxide Semiconductor) image sensors, which are solid-state imaging elements for color images, are used in video cameras, digital cameras, mobile phones with imaging functions, etc. The light receiving part uses a silicon photodiode that is sensitive to light in the near-infrared wavelength range, so the sensitivity correction is required, so a near-inf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/22C09K3/00H01L27/146
CPCC09K3/00H01L27/14618G02B5/223G02B5/208G02B1/04H01L27/146C07F9/091C07F9/093C07F9/097H01L27/1462
Inventor 板本奈津美大福幸司水谷洋介玉木继吾堀江悠太郎林健司中原一成野岛隆彦福坂洁
Owner KONICA MINOLTA INC