Unlock instant, AI-driven research and patent intelligence for your innovation.

Two-dimensional material electronic device and preparation method and application thereof

A technology of two-dimensional materials and electronic devices, which is applied in the coating process of metal materials, the manufacture of microstructure devices, and the process for producing decorative surface effects. Contact resistance, photoresist residue, etc.

Pending Publication Date: 2021-02-12
EAST CHINA NORMAL UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Zhang Guangyu et al. (Adv. Mater., 2017, 29, 1702522) first patterned graphene by photolithography, and then transferred the two-dimensional material (molybdenum disulfide) to graphene to obtain a two-dimensional graphene electrode. Molybdenum sulfide transistors, but in the process of patterning graphene, there will be photoresist residues on the surface of graphene, which will increase the contact resistance between graphene and two-dimensional materials
Shaista et al. (J.Mater.Chem.C, 2017,5,8308-8314) obtained molybdenum disulfide for graphene electrodes by first contacting graphene with two-dimensional materials, and then patterning graphene by etching technology. Transistors, but when etching graphene with oxygen, it will affect the quality of the two-dimensional material at the channel, thereby affecting the electrical properties of the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Two-dimensional material electronic device and preparation method and application thereof
  • Two-dimensional material electronic device and preparation method and application thereof
  • Two-dimensional material electronic device and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0028] The invention provides a method for preparing a two-dimensional material electronic device, comprising the following steps:

[0029] Prepare a two-dimensional material layer, an etching barrier layer and a graphene layer sequentially from bottom to top on the surface of an insulating substrate to obtain a first intermediate product; the areas of the etching barrier layer are respectively smaller than the two-dimensional material layer and the graphene layer and the graphene layer completely covers the etching barrier layer;

[0030] Taking the overlapping area of ​​the two-dimensional material layer, the etching barrier layer and the graphene layer as a starting point, after patterning the upper surface of the first intermediate product, preparing a metal electrode according to the obtained pattern, and obtaining a second intermediate product ;

[0031] Using the metal electrode as a mask, etching the two-dimensional material layer and the graphene layer in the second ...

Embodiment 1

[0048] Molybdenum disulfide with a length of 67 μm and a width of 25 μm was obtained by mechanical exfoliation; graphene with a length of 50 μm and a width of 35 μm was obtained by mechanical exfoliation; hexagonal boron nitride with a length of 22 μm and a width of 7 μm was obtained by mechanical exfoliation ;

[0049] The silicon dioxide substrate is cleaned to obtain a clean silicon dioxide substrate; the molybdenum disulfide is wet transferred to the clean silicon dioxide surface, and the hexagonal boron nitride is laid on the silicon dioxide surface by wet transfer. molybdenum sulfide surface, and then lay the graphene on the surface of hexagonal boron nitride by wet transfer to obtain the first intermediate product;

[0050] Starting from two-dimensional materials, hexagonal boron nitride and graphene overlapping regions, the upper surface of the first intermediate product is patterned using laser direct writing technology to obtain the shape of six electrodes (the speci...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of electronic devices, in particular to a two-dimensional material electronic device and a preparation method and application thereof. The preparation method provided by the invention comprises the following steps: sequentially preparing a two-dimensional material layer, an etching barrier layer and a graphene layer on the surface of an insulating substrate from bottom to top to obtain a first intermediate product, wherein the area of the etching barrier layer is smaller than the area of the two-dimensional material layer and the area of the graphene layer, and the etching barrier layer is completely coated with the graphene layer; taking an overlapping region of the two-dimensional material layer, the etching barrier layer and the graphene layer as a starting point, patterning the upper surface of the first intermediate product, and preparing a metal electrode according to the obtained pattern to obtain a second intermediate product; and etching the two-dimensional material layer and the graphene layer in the second intermediate product by taking the metal electrode as a mask to obtain the two-dimensional material electronic device. Byarranging the etching barrier layer, the two-dimensional material layer is protected from being influenced by etching, so that the electrical property of the electronic device is ensured.

Description

technical field [0001] The invention relates to the technical field of electronic devices, in particular to a two-dimensional material electronic device and its preparation method and application. Background technique [0002] Two-dimensional materials have attracted extensive attention due to their atomic-level thickness and excellent physical properties, and they have great application potential in many fields, especially in the field of electronic devices. However, the large contact resistance between two-dimensional materials and metals greatly limits the performance of electronic devices made of two-dimensional materials. Graphene is used as the contact electrode of the two-dimensional material, and the van der Waals contact between the graphene and the two-dimensional material can optimize the contact between the two-dimensional material and the electrode, and reduce the contact resistance between the two-dimensional material and the electrode. Zhang Guangyu et al. (A...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
CPCB81C1/00492
Inventor 吴幸夏银骆晨
Owner EAST CHINA NORMAL UNIV