Ion implantation thin film wafer stripping method, single crystal thin film and electronic component
An ion implantation, single crystal thin film technology, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as chip explosion and strong force
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Embodiment 1
[0110] 1) Prepare a single crystal silicon substrate wafer with a size of 4 inches, a thickness of 0.5 mm and a smooth surface. After cleaning the silicon substrate wafer, prepare a thickness on the surface of the single crystal silicon substrate wafer by thermal oxidation A silicon dioxide layer of 2 μm, wherein the surface roughness of the silicon dioxide is less than 0.5 nm.
[0111] 2) Prepare a 4-inch lithium niobate wafer, clean the lithium niobate wafer, and inject helium ions (He + ) into lithium niobate wafers, the implantation energy of helium ions is 200KeV, and the dose is 4×10 16 ions / cm 2 , forming a lithium niobate wafer with a three-layer structure of a thin film layer, a separation layer and a residue layer.
[0112] 3) Bond the thin film layer of the ion-implanted lithium niobate wafer with the silicon dioxide layer of the silicon substrate wafer by plasma bonding to form a bonded body; then put the bonded body into the heating device Keep warm at 100°C fo...
Embodiment 2
[0117] 1) Prepare a single crystal silicon substrate wafer with a size of 4 inches, a thickness of 0.5 mm and a smooth surface. After cleaning the silicon substrate wafer, prepare a thickness on the surface of the single crystal silicon substrate wafer by thermal oxidation A silicon dioxide layer of 2 μm, wherein the surface roughness of the silicon dioxide is less than 0.5 nm.
[0118] 2) Prepare a 4-inch lithium niobate wafer, clean the lithium niobate wafer, and inject helium ions (He + ) into lithium niobate wafers, the implantation energy of helium ions is 200KeV, and the dose is 4×10 16 ions / cm 2 , forming a lithium niobate wafer with a three-layer structure of a thin film layer, a separation layer and a residue layer.
[0119] 3) Bond the thin film layer of the ion-implanted lithium niobate wafer with the silicon dioxide layer of the silicon substrate wafer by plasma bonding to form a bonded body; then put the bonded body into the heating device Keep warm at 100°C fo...
Embodiment 3
[0124] 1) Prepare a single crystal silicon substrate wafer with a size of 4 inches, a thickness of 0.5 mm and a smooth surface. After cleaning the silicon substrate wafer, prepare a thickness on the surface of the single crystal silicon substrate wafer by thermal oxidation A silicon dioxide layer of 2 μm, wherein the surface roughness of the silicon dioxide is less than 0.5 nm.
[0125] 2) Prepare a 4-inch lithium niobate wafer, clean the lithium niobate wafer, and inject helium ions (He + ) into lithium niobate wafers, the implantation energy of helium ions is 200KeV, and the dose is 4×10 16 ions / cm 2 , forming a lithium niobate wafer with a three-layer structure of a thin film layer, a separation layer and a residue layer.
[0126] 3) Bond the thin film layer of the ion-implanted lithium niobate wafer with the silicon dioxide layer of the silicon substrate wafer by plasma bonding to form a bonded body; then put the bonded body into the heating device Keep warm at 200°C fo...
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Abstract
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