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Magnetic tunnel junction and method for reducing magnetic tunnel junction free layer process fluctuation

A magnetic tunnel junction and free technology, which is applied in the fields of magnetic field controlled resistors, components of electromagnetic equipment, manufacturing/processing of electromagnetic devices, etc., can solve problems such as free layer flipping, reduced service life, and bit error erasure , to achieve the effect of improving uniformity and reducing process fluctuations

Active Publication Date: 2021-02-23
ZHEJIANG HIKSTOR TECHOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The switching between "0" and "1" in the MRAM is realized by the flipping of the free layer, so the smaller the coercive force of the free layer, the easier flipping, the smaller the driving force required, and the lower the power consumption ; but if the coercive force is too small, there will be a risk that the free layer will be flipped by the read current / thermal disturbance, so the free layer must meet the requirements of a certain thermal stability factor
The device design of the free layer must meet certain requirements in both the upper and lower limits, and due to the existence of process fluctuations, when it crosses the lower limit, some bits have the problem of miserasing; when it crosses the upper limit, then Will increase the power consumption of the overall array, while reducing the service life

Method used

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  • Magnetic tunnel junction and method for reducing magnetic tunnel junction free layer process fluctuation
  • Magnetic tunnel junction and method for reducing magnetic tunnel junction free layer process fluctuation

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Embodiment 1

[0031] An embodiment of the present invention provides a magnetic tunnel junction, such as figure 1 As shown, it includes a reference layer 1 , a barrier layer 2 , a magnetic buffer layer 3 and a free layer 4 stacked in sequence; wherein, the ductility of the magnetic buffer layer 3 is stronger than that of the free layer 4 .

[0032] The material of the reference layer 1 is a ferromagnetic material, one or a combination of Co, Fe, CoFe, FeB, CoFeB or Heusler alloy materials can be selected, and the magnetization direction of the reference layer 1 is fixed.

[0033] The material of the barrier layer 2 is a non-magnetic material, and one or a combination of magnesium oxide, aluminum oxide, magnesium aluminum oxide, hafnium oxide, tantalum oxide, bismuth telluride or bismuth selenide can be selected things.

[0034] The material of the magnetic buffer layer 3 is also a magnetic material, and one or a combination of Co, Fe, CoFe, FeB, CoFeB or Heusler alloy materials can be sele...

Embodiment 2

[0042] This embodiment provides a magnetic tunnel junction, such as figure 2 As shown, it includes pinning layer 6, antiferromagnetic coupling layer 5, reference layer 1, barrier layer 2, magnetic buffer layer 3 and free layer 4 stacked in sequence; wherein, the ductility of magnetic buffer layer 3 is higher than that of free layer 4 The ductility is strong. The free layer 4 includes a first free layer 41 , a coupling layer 42 and a second free layer 43 stacked in sequence. Wherein the first free layer 41 is in contact with the buffer layer. In order to protect the second free layer 43 , a cover layer 7 is further laminated on the second free layer 43 .

[0043] The material of the pinning layer 6 can be selected from one or a combination of Co, Fe, CoFe, NiFe, NiFeCo, CoFeB, CoMnB or CoNbZr.

[0044] The antiferromagnetic coupling layer 5 can be selected from one or a combination of ruthenium, chromium, rhodium or iridium.

[0045] The material of the reference layer 1 i...

Embodiment 3

[0055] This embodiment provides a method for reducing the process fluctuation of the magnetic tunnel junction free layer, including:

[0056] Provide a reference layer and a barrier layer stacked sequentially from bottom to top;

[0057] A magnetic buffer layer and a free layer are sequentially laminated on the barrier layer, and the magnetic buffer layer is more ductile than the free layer.

[0058] The specific forming process is as follows: select one or a combination of Co, Fe, CoFe, FeB, CoFeB or Heusler alloy materials as raw materials, and make the raw materials form a reference layer on the substrate.

[0059] Select one or a combination of magnesium oxide, aluminum oxide, magnesium aluminum oxide, hafnium oxide, tantalum oxide, bismuth telluride or bismuth selenide as raw materials to form a barrier layer on the reference layer .

[0060] One or a combination of Co, Fe, CoFe, FeB, CoFeB or Heusler alloy materials is selected as a raw material to form a magnetic buff...

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Abstract

The invention provides a magnetic tunnel junction. The magnetic tunnel junction at least comprises a reference layer, a barrier layer, a magnetic buffer layer and a free layer which are stacked in sequence; the ductility of the magnetic buffer layer is stronger than that of the free layer. According to the invention, the thin magnetic buffer layer is added on the surface of the barrier layer, anda smoother substrate is provided by using the better ductility of the thin magnetic buffer layer, so that the uniformity of a subsequently deposited free layer film is better, and the TMR effect of amagnetic tunnel is not damaged.

Description

technical field [0001] The invention relates to the technical field of magnetic random access memory, in particular to a magnetic tunnel junction and a method for reducing process fluctuations of a free layer of the magnetic tunnel junction. Background technique [0002] MRAM has the advantages of long life, low power consumption, and non-volatility. It is mainly achieved by flipping the magnetization direction of the free layer to make it parallel or antiparallel to the magnetization direction of the reference layer to switch between different resistances. Erasing and writing of data "0" or "1". [0003] Affected by process fluctuations, for a memory array, the performance of all the bits in it cannot be completely consistent, but distributed within a certain range. This process fluctuation must be planned in advance when designing the device. For magnetic random access memory, such process fluctuations also exist, and different parts of the magnetic tunnel junction have d...

Claims

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Application Information

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IPC IPC(8): H01L43/02H01L43/08H01L43/12
CPCH10N50/80H10N50/10H10N50/01H10B61/00H10N59/00
Inventor 孙一慧孟凡涛
Owner ZHEJIANG HIKSTOR TECHOGY CO LTD
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