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Silicon carbide single crystal as well as production method and application thereof

A silicon carbide single crystal and production method technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve problems such as uneven resistivity

Active Publication Date: 2021-03-02
SICC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the crystal growth method of PVT will inevitably lead to the inhomogeneity of resistivity

Method used

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  • Silicon carbide single crystal as well as production method and application thereof
  • Silicon carbide single crystal as well as production method and application thereof
  • Silicon carbide single crystal as well as production method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] Embodiment 1, crucible for silicon carbide single crystal production

[0058] Such as figure 1 As shown, this embodiment provides a crucible for silicon carbide single crystal growth, including a side wall 1, a bottom 2 and an inner cavity 3 surrounded by the side wall 1 and the bottom 2,

[0059] The inner cavity 3 is used for growing silicon carbide single crystal by the physical vapor transport method, and the side wall 1 is provided with a channel 4 surrounding the inner cavity 3 of the crucible,

[0060] The material of the side wall of the channel 4 near the side of the inner cavity 3 is the first graphite material (gas permeable graphite material), and the material of the side wall of the channel 3 away from the side of the inner cavity is the second graphite material (gas permeable or non-gas permeable). graphite material),

[0061] The gas permeability of the first graphite material is higher than that of the second graphite material, so that gas such as nitr...

Embodiment 2

[0072] Embodiment 2. A device for growing silicon carbide single crystal

[0073] Such as figure 2 As shown, a silicon carbide single crystal growth device provided in this embodiment includes: the crucible in embodiment 1, an upper cover 13 for sealing the crucible, a heat preservation structure 14 arranged on the outer periphery of the crucible, and a heat preservation structure 14 arranged on the outer periphery of the crucible. The outer vacuum isolation cover 15, the heating coil 16 arranged outside the vacuum isolation cover 15, and the thermometer 17 for monitoring the temperature at the upper cover 13, and the top of the heat preservation structure 14 are provided with cooling holes 18.

[0074] The using method of above-mentioned crucible and device is as follows:

[0075] When growing silicon carbide, place the raw material 5 in the first part 6 of the inner cavity 3, set the seed crystal 12 on the inner wall of the upper cover 13 on the top of the second part 7 of...

Embodiment 3

[0078] Embodiment 3, silicon carbide single crystal production process

[0079] Use the silicon carbide single crystal production device in embodiment 2 to carry out, the method is as follows:

[0080] 1) Heating stage (10h): control the temperature of the upper cover 13 of the crucible, that is, the thermometer 17 rises to 1900K, at this time, the temperature of the top surface of the raw material 5 rises to 2200K, and the absolute pressure in the growth chamber, that is, the inner chamber 3, is 0.9×10 5 Pa, a protective atmosphere of argon gas is passed into the growth chamber, and nitrogen gas is passed into the channel;

[0081] 2) Crystal growth stage 1 (50h): Make the flow rate of nitrogen gas in the channel 75ml / min, control the temperature of the infrared thermometer, that is, the thermometer 17, to 2500K, control the absolute pressure in the growth chamber to 3000Pa, and grow silicon carbide single crystal 50 hours;

[0082] 3) Crystal growth stage 2 (50h): replace ...

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Abstract

The invention discloses a silicon carbide single crystal as well as a production method and application thereof. The method comprises the following steps: growing a silicon carbide single crystal by using a physical vapor transport method, and adjusting the distribution of the nitrogen doping amount in the silicon carbide single crystal in a manner of permeating nitrogen to the silicon carbide single crystal through a breathable graphite material according to the temperature distribution of the silicon carbide single crystal. In the PVT crystal growth process, the graphite wall is used for inwards permeating nitrogen, the technical problems of non-uniform nitrogen doping amount and resistivity distribution caused by temperature gradients in the radial direction and the axial direction in the PVT method silicon carbide crystal growth process can be solved, and the method can be used for adjusting the nitrogen doping amount and the resistivity distribution of the N-type silicon carbide single crystal. The method has important application value in the aspects of improving the distribution uniformity of the nitrogen doping amount of the large-size N-type silicon carbide single crystal,improving the distribution uniformity of the resistivity, improving the quality of the silicon carbide single crystal and the like.

Description

technical field [0001] The invention relates to the field of silicon carbide, in particular to a silicon carbide single crystal and its production method and application. Background technique [0002] Silicon carbide is a typical representative of the third-generation wide-bandgap semiconductor material after silicon and gallium arsenide. It has excellent physical properties such as large bandgap, high saturation electron drift rate, strong breakdown field, and high thermal conductivity. Therefore, it is widely used in power electronics, radio frequency devices, optoelectronic devices and other fields. High-quality silicon carbide crystals are the cornerstone of the development of semiconductor and information industries, and their preparation level restricts the preparation and performance of downstream devices. [0003] Although great progress has been made in growing silicon carbide crystals by physical vapor transport (PVT) in recent years, the stability of the grown cr...

Claims

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Application Information

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IPC IPC(8): C30B23/00C30B29/36
CPCC30B23/005C30B29/36
Inventor 方帅高宇晗高超石志强杨世兴宗艳民
Owner SICC CO LTD
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