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A kind of silicon carbide single crystal and its production method and application

A silicon carbide single crystal and production method technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve problems such as uneven resistivity, and improve distribution uniformity and resistivity distribution uniformity Improved effect

Active Publication Date: 2022-07-08
SICC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the crystal growth method of PVT will inevitably lead to the inhomogeneity of resistivity

Method used

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  • A kind of silicon carbide single crystal and its production method and application
  • A kind of silicon carbide single crystal and its production method and application
  • A kind of silicon carbide single crystal and its production method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] Embodiment 1, crucible for silicon carbide single crystal production

[0058] like figure 1 As shown, this embodiment provides a crucible for silicon carbide single crystal growth, comprising a side wall 1, a bottom 2 and an inner cavity 3 surrounded by the side wall 1 and the bottom 2,

[0059] The inner cavity 3 is used for the growth of silicon carbide single crystal by the physical vapor transport method, and a channel 4 surrounding the inner cavity 3 of the crucible is arranged in the side wall 1,

[0060] The side wall of the channel 4 close to the inner cavity 3 is made of a first graphite material (a gas permeable graphite material), and the side wall of the channel 3 away from the inner cavity is made of a second graphite material (a gas permeable or non-breathable graphite material). graphite material),

[0061] The gas permeability of the first graphite material is higher than that of the second graphite material, so that gas such as nitrogen can penetrate ...

Embodiment 2

[0072] Embodiment 2. A device for growing silicon carbide single crystal

[0073] like figure 2 As shown in the figure, a silicon carbide single crystal growth device provided in this embodiment includes: the crucible in Embodiment 1, an upper cover 13 for sealing the crucible, a heat preservation structure 14 provided on the outer periphery of the crucible, and a heat preservation structure 14 provided on the crucible. The outer vacuum isolation cover 15 , the heating coil 16 disposed outside the vacuum isolation cover 15 , and the thermometer 17 for monitoring the temperature of the upper cover 13 , and the top of the heat preservation structure 14 is provided with heat dissipation holes 18 .

[0074] The using method of above-mentioned crucible and device is as follows:

[0075] When the silicon carbide crystal growth is carried out, the raw material 5 is placed in the first part 6 of the inner cavity 3, the seed crystal 12 is set on the inner wall of the top cover 13 of ...

Embodiment 3

[0078] Embodiment 3, silicon carbide single crystal production process

[0079] Use the device for the production of silicon carbide single crystals in Example 2, and the method is as follows:

[0080] 1) Heating stage (10h): control the temperature of the crucible upper cover 13, that is, the temperature of the thermometer 17 rises to 1900K, at this time the temperature of the top surface of the raw material 5 rises to 2200K, and the absolute pressure in the growth chamber, that is, the inner cavity 3 is 0.9×10 5 Pa, the protective atmosphere argon gas was introduced into the growth chamber, and nitrogen gas was introduced into the channel;

[0081] 2) Crystal growth stage 1 (50h): the flow rate of nitrogen gas in the channel is 75ml / min, the temperature of the infrared thermometer, that is, the thermometer 17 is controlled to be 2500K, the absolute pressure in the growth chamber is controlled to be 3000Pa, and the silicon carbide single crystal is grown. 50 hours;

[0082]...

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Abstract

The present application discloses a silicon carbide single crystal and a production method and application thereof. The method includes the following steps: using a physical vapor transport method to grow a silicon carbide single crystal, and adjusting the silicon carbide single crystal by infiltrating nitrogen gas into the silicon carbide single crystal through a gas-permeable graphite material according to the temperature distribution of the silicon carbide single crystal. Distribution of nitrogen doping in silicon carbide single crystals. In the present invention, in the process of PVT crystal growth, the graphite wall is used to infiltrate nitrogen gas, which can balance the nitrogen doping amount and the uneven distribution of resistivity caused by the radial and axial temperature gradients existing in the PVT silicon carbide crystal growth process. The present invention can be used to adjust the nitrogen doping amount and resistivity distribution of the N-type silicon carbide single crystal, and improve the distribution uniformity of the nitrogen doping amount and the resistivity of the large-sized N-type silicon carbide single crystal. Silicon carbide single crystal quality has important application value.

Description

technical field [0001] The invention relates to the field of silicon carbide, in particular to a single crystal of silicon carbide and a production method and application thereof. Background technique [0002] Silicon carbide is a typical representative of the third generation of wide-bandgap semiconductor materials after silicon and gallium arsenide. It has excellent physical properties such as large band gap, high saturation electron drift rate, strong breakdown field and high thermal conductivity. Therefore, it is widely used in power electronics, radio frequency devices, optoelectronic devices and other fields. High-quality silicon carbide crystal is the cornerstone of the development of semiconductor and information industries, and its preparation level restricts the preparation and performance of downstream devices. [0003] Although great progress has been made in the growth of SiC crystals by physical vapor transport (PVT) in recent years, the stability of the grown...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/00C30B29/36
CPCC30B23/005C30B29/36
Inventor 方帅高宇晗高超石志强杨世兴宗艳民
Owner SICC CO LTD
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