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Quantum dot composite material and preparation method thereof

A composite material and quantum dot technology, which is applied in the field of quantum dot composite materials and its preparation, can solve the problems of energy transfer and self-absorption of inorganic semiconductor quantum dots, so as to avoid energy transfer and self-absorption, increase blue light absorption, and improve photoelectric conversion efficiency effect

Active Publication Date: 2021-03-12
NANJING TECH CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the defects of excessive energy transfer between inorganic semiconductor quantum dots and self-absorption phenomenon when inorganic semiconductor quantum dots are used in the prior art

Method used

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  • Quantum dot composite material and preparation method thereof
  • Quantum dot composite material and preparation method thereof
  • Quantum dot composite material and preparation method thereof

Examples

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Effect test

Embodiment 1

[0039] CdZnSeS / cesium lead bromide (CsPbBr 3 ) synthesis of quantum dots. 1mmol ZnBr 2 , 1.2mL oleylamine, 1mL oleic acid, and 10mL ODE were mixed in a 100mL three-necked flask, heated to 120°C for 10 minutes, injected with CdZnSeS alloy quantum dots with an absorbance of 50 at 450nm (the fluorescence peak position is 525nm), and raised the temperature to 200°C, react for 5 minutes, ligand exchange. Cool down to 150°C, add 0.4 mL of 0.5 mmol / mL lead oleate and 1 mL of 0.2 mmol / mL cesium oleate solution, react for 5 minutes, and stop the reaction.

Embodiment 2

[0041] CdZnSeS / cesium lead chloride (CsPbCl 3 ) synthesis of quantum dots. 1mmol ZnCl 2, 1.2mL oleylamine, 1mL oleic acid, and 10mL ODE were mixed in a 100mL three-necked flask, heated to 120°C for 10 minutes, injected with CdZnSeS alloy quantum dots with an absorbance of 50 at 450nm (the fluorescence peak position is 525nm), and raised the temperature to 200°C, react for 5 minutes, ligand exchange. Cool down to 150°C, add 0.4 mL of 0.5 mmol / mL lead oleate and 1 mL of 0.2 mmol / mL cesium oleate solution, react for 5 minutes, and stop the reaction.

Embodiment 3

[0043] CdZnSeS / cesium lead iodide (CsPbI 3 ) synthesis of quantum dots. 1mmol ZnI 2 , 1.2mL oleylamine, 1mL oleic acid, and 10mL ODE were mixed in a 100mL three-necked flask, heated to 120°C for 10 minutes, injected with CdZnSeS alloy quantum dots with an absorbance of 50 at 450nm (the fluorescence peak position is 525nm), and raised the temperature to 200°C, react for 5 minutes, ligand exchange. Cool down to 150°C, add 0.4 mL of 0.5 mmol / mL lead oleate and 1 mL of 0.2 mmol / mL cesium oleate solution, react for 5 minutes, and stop the reaction.

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Abstract

The invention belongs to the technical field of quantum dot manufacturing, and provides a preparation method for a quantum dot composite material. The preparation method comprises the following steps:adding a first quantum dot into a halogen precursor solution obtained through a mixing reaction of a metal halide, fatty amine and an organic acid in advance, and carrying out a surface ligand exchange reaction so as to obtain a mixed solution; and mixing the mixed solution with lead carboxylate and cesium carboxylate, and carrying out a reaction to obtain the quantum dot composite material. Theinvention also provides the quantum dot composite material, and a quantum dot composition and a quantum dot device containing the quantum dot composite material. The invention has the beneficial effects that distances among first quantum dots in spatial arrangement are relatively large, so the phenomena of energy transfer and self-absorption among the first quantum dots are greatly avoided; meanwhile, carriers are easy to move, so the composite material has high photoelectric conversion efficiency; and in addition, blue light absorption is increased, so the actual usage amount of the quantum dots is reduced in some application scenes.

Description

technical field [0001] The invention belongs to the technical field of quantum dot manufacturing, and relates to a quantum dot composite material and a preparation method thereof. Background technique [0002] Solution semiconductor nanocrystals (solution quantum dots) with sizes in the quantum confinement range have attracted extensive attention in the fields of biological imaging and labeling, display, solar cells, light-emitting diodes, and single-photon sources due to their unique optical properties. Especially in the fields of biological labeling and imaging, light-emitting diodes, lasers, and quantum dot photovoltaic devices, quantum dot research has become one of the hot spots. In key core areas such as display (quantum dot backlight TV), lighting, etc. that affect people's daily life, quantum dots have already obtained preliminary practical applications. When inorganic semiconductor quantum dots are used in LED, display and other fields, they usually need to be prep...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88
CPCC09K11/883
Inventor 周健海朱晓艳
Owner NANJING TECH CORP LTD
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