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A kind of near-infrared narrow-band detector based on cadmium selenide thin film and preparation method thereof

A cadmium selenide, detector technology, used in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve high-cost filters, surface contamination or scratches are very sensitive, commercial filters cannot meet The needs of many applications, etc., to achieve the effect of high imaging quality, low cost and simple structure

Active Publication Date: 2022-05-20
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The first detection system requires costly filters, and complex optical system design and integration
Furthermore, current commercial optical filters are not adequate for many applications due to their inherent limitations
For example, interference filters are prone to side peaks and are very sensitive to surface contamination or scratches
In the second method, for narrow-band absorbing materials, although they have been successfully applied to short-wavelength photodetectors with wide-bandgap semiconductors as active materials, such as visible light or solar-blind ultraviolet light detectors, it is still difficult to realize narrow-band visible light or infrared detection. a challenge
In the third approach, plasmon-enhanced absorption is also limited to its operating spectral range and non-suppressed absorption in other non-plasmonic wavelength ranges

Method used

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  • A kind of near-infrared narrow-band detector based on cadmium selenide thin film and preparation method thereof
  • A kind of near-infrared narrow-band detector based on cadmium selenide thin film and preparation method thereof
  • A kind of near-infrared narrow-band detector based on cadmium selenide thin film and preparation method thereof

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preparation example Construction

[0036] The present invention also provides a method for preparing the above-mentioned near-infrared narrow-band detector based on the cadmium selenide thin film, comprising the following steps:

[0037] (S1) Depositing a cadmium selenide film with a thickness of not less than 1 μm on the substrate;

[0038] (S2) Depositing a P-type light-absorbing layer on the cadmium selenide film;

[0039] (S3) Depositing a metal electrode on the P-type light absorbing layer, thereby obtaining a near-infrared narrow-band detector based on a cadmium selenide thin film.

[0040] In some optional embodiments, in step (S1), a cadmium selenide film is deposited on the substrate by a rapid thermal evaporation method.

[0041] In some optional embodiments, in step (S2), a P-type light absorbing layer is deposited on the cadmium selenide thin film by using a water bath deposition method or a vacuum method.

[0042] In some optional embodiments, in step (S3), metal electrodes are deposited on the P...

Embodiment 1

[0045] A method for preparing a near-infrared narrow-band detector based on a cadmium selenide thin film, comprising the steps of:

[0046](1) Clean the transparent conductive FTO glass with deionized water, acetone, isopropanol, ethanol and deionized water in turn for 30 minutes, and then dry it with a nitrogen gun to obtain a clean substrate;

[0047] (2) The cadmium selenide thin film is prepared by rapid thermal evaporation. The preparation process is to use cadmium selenide powder as the evaporation source, the vacuum degree is 1Pa, set the substrate temperature to 400°C, maintain it for 15min, and heat the evaporation source to 820°C , the evaporation time is 100s, and a cadmium selenide film with a thickness of about 2 μm is obtained;

[0048] (3) Preparation of P-type Sb by water bath deposition method 2 (S, Se) 3 Light-absorbing layer, the absorption band edge is 850nm;

[0049] (4) On the P-type light-absorbing layer, metal electrodes are deposited by thermal evap...

Embodiment 2

[0052] A method for preparing a near-infrared narrow-band detector based on a cadmium selenide thin film, comprising the steps of:

[0053] (1) Clean the transparent conductive FTO glass with deionized water, acetone, isopropanol, ethanol and deionized water for 30 minutes each, and then dry it with a nitrogen gun to obtain a clean substrate;

[0054] (2) The cadmium selenide thin film is prepared by rapid thermal evaporation. The preparation process is to use cadmium selenide powder as the evaporation source, the vacuum degree is 1Pa, set the substrate temperature to 400°C, maintain it for 15min, and heat the evaporation source to 820°C , the evaporation time is 100s, and a cadmium selenide film with a thickness of about 2 μm is obtained;

[0055] (3) Preparation of P-type Sb by vacuum method 2 (S, Se) 3 Light-absorbing layer, the absorption band edge is 800nm;

[0056] (4) On the P-type light-absorbing layer, metal electrodes are deposited by thermal evaporation to prepar...

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Abstract

The invention discloses a near-infrared narrow-band detector based on a cadmium selenide thin film and a preparation method thereof, belonging to the field of photoelectric materials and photoelectric detector preparation, and the detector includes from bottom to top: a substrate, a cadmium selenide thin film, and a P-type light-absorbing layer and metal electrodes; the thickness of the cadmium selenide film is not less than 1 μm; the spectral absorption band edge of the P-type light-absorbing layer is greater than 710nm. The preparation method includes: (S1) depositing a cadmium selenide film with a thickness of not less than 1 μm on a substrate; (S2) depositing a P-type light-absorbing layer on the cadmium-selenide film; (S3) depositing a metal electrode on the P-type light-absorbing layer, thereby A near-infrared narrow-band detector based on cadmium selenide thin film is obtained. The invention can realize near-infrared narrow-band detection with a wavelength greater than 710nm, and has simple structure and low cost.

Description

technical field [0001] The invention belongs to the field of preparation of photoelectric materials and photodetectors, and more specifically relates to a near-infrared narrow-band detector based on a cadmium selenide thin film and a preparation method thereof. Background technique [0002] In the fields of biomedical sensing, imaging, defense, and surveillance, when only a small spectral range of light needs to be detected and the rest (usually background or ambient radiation) needs to be suppressed, spectrally selective light detection is widely used. Infrared photodetectors (NIR PDs) have attracted considerable attention over the past few decades due to their great potential in medical instrumentation. Due to the advantages of less photodamage to biological samples, deep tissue penetration depth, and minimal background autofluorescence interference in biological systems, the detection and imaging of fluorescent photons in this range has become a powerful real-time tool fo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/101H01L31/0216H01L31/0296H01L31/18
CPCH01L31/101H01L31/02161H01L31/0296H01L31/1828Y02P70/50
Inventor 唐江李康华陈超牛广达卢岳杨许可林雪甜
Owner HUAZHONG UNIV OF SCI & TECH
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