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Semiconductor high-temperature-resistant pressure and temperature sensor chip and preparation method thereof

A sensor chip, pressure sensor technology, applied in semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve the problems of low accuracy, maximum accuracy limit, large chip output error, etc. Achieve high-precision measurement, excellent stability and accuracy

Pending Publication Date: 2021-03-16
广州德芯半导体科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in actual use, the output error of the chip without temperature compensation will be very large, and the measurement becomes meaningless. The traditional temperature compensation method is to make a PN junction on the semiconductor chip and use the temperature characteristics of the PN junction To measure the temperature to compensate the parameters of the pressure chip, but the PN junction is limited by its own temperature and its own accuracy, so it can only be compensated within a narrow range, and the accuracy after compensation cannot reach high performance. The temperature of the semiconductor pressure chip medium should not be too high, generally not exceeding 100 degrees Celsius, and the highest accuracy of compensation is also greatly limited

Method used

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  • Semiconductor high-temperature-resistant pressure and temperature sensor chip and preparation method thereof
  • Semiconductor high-temperature-resistant pressure and temperature sensor chip and preparation method thereof
  • Semiconductor high-temperature-resistant pressure and temperature sensor chip and preparation method thereof

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Embodiment 1

[0025] The preparation method of the semiconductor high temperature resistant pressure temperature sensor chip of this embodiment includes the following steps:

[0026] Step 1: Implant four electrodes on the front of the silicon wafer (also known as "silicon substrate") using photolithography technology, and then etch a cup-shaped cavity on the back of the silicon wafer (silicon substrate) to make a thin sheet;

[0027] Step 2: Apply photoresist on the front side of the wafer and leave the area where the platinum resistor is planned to be made;

[0028] Step 3: Vacuum sputter a layer of Sn in the area where the platinum resistance is made, heat it to 450~500°C after the sputtering time is 8~12 minutes, and naturally cool to 120±5°C under aerobic conditions to generate SnO 2 transition layer;

[0029] Step 4: On the SnO 2 A Pt layer is vacuum-sputtered on the transition layer, and a preset resistance value is engraved on the Pt layer by laser scribing method. The resistance v...

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Abstract

The invention discloses a semiconductor high-temperature-resistant pressure and temperature sensor chip, which adopts a Pt thermistor manufactured by a semiconductor process as a compensation resistor, realizes temperature compensation in a wide range, is used in occasions with higher temperature requirements. The preparation method can solve the problems that the Pt film and SiO2 are poor in direct adhesion effect and easy to fall off. Meanwhile, the whole preparation method is simple to operate and can be used for mass production.

Description

technical field [0001] The invention relates to the technical field of sensor chips, in particular to a semiconductor high temperature resistant pressure temperature sensor chip and a preparation method thereof. Background technique [0002] Silicon pressure sensors are usually made by MEMS technology. Take the piezoresistive type as an example: use semiconductor monocrystalline silicon as the raw material for the pressure sensitive element material, and use the Wheatstone bridge to connect four semiconductor devices with piezoresistive effect. The diffused resistance made by the process is made on the appropriate position of the pressure diaphragm. Due to the piezoresistive effect of the silicon resistance, the deformation of the diaphragm will lead to a change in the resistance value, resulting in a large change in the output of the bridge, thus reflecting the measured pressure. Such a measurement principle makes the change of resistance must correspond to the change of pr...

Claims

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Application Information

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IPC IPC(8): B81B7/02B81B7/00B81C1/00G01D21/02
CPCB81B7/02B81B7/0083B81C1/00015G01D21/02B81B2201/0264
Inventor 汪民许玉方李朗
Owner 广州德芯半导体科技有限公司
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