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Resistive random access memory and preparation method thereof

A technology of resistive memory and dielectric layer, applied in the field of memory, can solve the problems of uneven distribution of device switching voltage, large difference in device switching voltage distribution, poor electrical performance, etc., achieve high reset voltage uniformity, reduce cumbersome The effect of improving the resistance value of high resistance state

Active Publication Date: 2021-03-16
YANGZHOU UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The resistive switch layer materials can be divided into binary metal oxides, organic materials, solid electrolyte materials, chalcogenide semiconductor materials and perovskite structure oxides, focusing on the analysis of the resistive switch layer of the resistive memory, based on the single Compared with the resistive variable memory based on double-layer or multi-layer switch layer, the electrical performance of the resistive variable memory based on the double-layer switch layer is much worse. Insufficiencies such as small switching ratio at the scale of 10 nm layer
The resistive variable memory prepared in the prior art requires a tedious activation process during the test process, the switching ratio of the device is small, and the voltage distribution of the device switch is very different.

Method used

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  • Resistive random access memory and preparation method thereof
  • Resistive random access memory and preparation method thereof
  • Resistive random access memory and preparation method thereof

Examples

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Embodiment 1

[0041] A resistive variable memory, comprising a bottom electrode, a dielectric layer and a top electrode arranged in sequence from bottom to top, the bottom electrode is preferably titanium, the dielectric layer is preferably a combination of hafnium oxide and a polyimide layer, and the top electrode is preferably Pt and Au.

[0042] A method for preparing a resistive variable memory, comprising the following steps,

[0043] (1) Si / SiO of 3 cm*3 cm 2 The slices were ultrasonically cleaned in acetone, isopropanol, and deionized water for 15 minutes each time, then dried with nitrogen and placed in a clean container;

[0044] (2) RF magnetron sputtering Ti electrode (100 nm), bulk vacuum 5*10 -4Pa, the Ar flow rate is 20 sccm, the sputtering pressure is 0.5 Pa, the sputtering power is 120 W, and the sputtering source bias is 30 V;

[0045] (3) Cut the high-temperature adhesive into two strips of 0.5 cm×3 cm in size (50% of the high-temperature adhesive is polyimide), the upp...

Embodiment 2

[0059] The difference from Example 1 is that in step (4), 4 nm aluminum oxide is firstly deposited by thermal atomic layer deposition, and then 4 nm hafnium oxide is deposited, wherein trimethylaluminum is used as the aluminum oxide source, water is used as the oxygen source, and the source is heated The temperature was 25 °C, the purge and carrier gas was nitrogen, the flow rate was 20 sccm, the temperature of the reaction chamber was 200 °C, and the thickness of the dielectric layer was 8 nm.

Embodiment 3

[0061] The difference between this example and example 1 and example 2 is that in step (4), a single layer of hafnium oxide is deposited, and the thickness of the overall dielectric layer is 8 nm.

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Abstract

The invention discloses a resistive random access memory and a preparation method thereof in the technical field of memories, and the resistive random access memory comprises a bottom electrode, a dielectric layer and a top electrode which are sequentially arranged from bottom to top, the bottom electrode is one of active electrodes Ag and Cu or oxyphilic electrodes W, Ti and TiN, and the dielectric layer comprises at least one oxide layer and a polymer film. The top electrode comprises one of an inert electrode Pt, Au or Pd; the resistive random access memory prepared by the method is high inswitching ratio, and the uniformity of reset voltage is improved.

Description

technical field [0001] The invention belongs to the technical field of memory, and in particular relates to a resistive variable memory and a preparation method thereof. Background technique [0002] RRAM is a two-terminal electronic device with a typical metal-insulator-metal sandwich structure. Electrode materials can be mainly divided into active electrodes (copper, silver, etc.), inert electrodes (platinum, gold, etc.), oxygen-friendly electrodes (tungsten, etc.) , titanium, etc.) three categories. Due to its high storage density, low energy consumption, fast switching speed, etc., RRAM is considered a promising candidate for data storage, next-generation computing, and applications in memristor synapses. The resistive switch layer materials can be divided into binary metal oxides, organic materials, solid electrolyte materials, chalcogenide semiconductor materials and perovskite structure oxides, focusing on the analysis of the resistive switch layer of resistive memor...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/841H10N70/881H10N70/011H10N70/8833
Inventor 尹彬沣王永志钱长成
Owner YANGZHOU UNIV
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