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Preparation method of magnetic tunnel junction

A magnetic tunnel junction and magnetic thin film technology, applied in the manufacture/processing of electromagnetic devices, resistors controlled by magnetic fields, etc., can solve problems affecting device performance, metal deposition pollution, etc., and achieve the effect of avoiding short circuits and reducing metal deposition pollution

Pending Publication Date: 2021-03-19
CETHIK GRP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The traditional MTJ patterning process adopts ion beam etching, reactive ion etching and other technologies. During the etching process, etching by-products, such as bottom electrode materials, are inevitably produced. These by-products are easy to adhere to the sidewall of the MTJ. Cause metal deposition contamination, which can affect device performance

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  • Preparation method of magnetic tunnel junction
  • Preparation method of magnetic tunnel junction
  • Preparation method of magnetic tunnel junction

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Embodiment Construction

[0030] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is only some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0031] An embodiment of the present invention provides a method for preparing a magnetic tunnel junction, such as figure 1 As shown, the method includes:

[0032] S101. Provide a substrate, and sequentially deposit a bottom electrode material layer, an MTJ material layer, a metal hard mask layer, and a dielectric hard mask layer on the subst...

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Abstract

The invention provides a preparation method for a magnetic tunnel junction. The method comprises the following steps: providing a substrate, and sequentially depositing a bottom electrode material layer, an MTJ material layer, a metal hard mask layer and a dielectric hard mask layer on the substrate, wherein the MTJ material layer comprises a first magnetic thin film layer, an insulating thin filmlayer located on the first magnetic thin film layer and a second magnetic thin film layer located on the insulating thin film layer; photoetching a mask shape, and etching the dielectric hard mask layer and the metal hard mask layer; further etching the MTJ material layer, and enabling an etching terminal point to stay at an interface of the insulating thin film layer and the first magnetic thinfilm layer; forming a first protective layer, etching the first protective layer, and only reserving a vertical part of the first protective layer; and etching the first magnetic thin film layer by taking the etched metal hard mask layer as a hard mask to form an MTJ bit. According to the invention, metal deposition generated in the MTJ etching process can be reduced.

Description

technical field [0001] The invention relates to the technical field of magnetic memory, in particular to a method for preparing a magnetic tunnel junction. Background technique [0002] MRAM (Magnetic Random Access Memory, Magnetic Random Access Memory) is considered to be the future solid-state non-volatile memory, with excellent properties such as fast read and write speed, non-volatile, and radiation resistance. MRAM uses MTJ (Magnetic Tunnel Junction) as the basic memory unit. The core part of MTJ is composed of two ferromagnetic layers (ferromagnetic metal materials, with a typical thickness of 1-2.5nm) sandwiching a tunneling barrier layer ( Insulating materials, with a typical thickness of 1-1.5nm) form a nano-multilayer film similar to a sandwich structure. One of the ferromagnetic layers is called the reference or pinned layer, and its magnetization is fixed along the easy axis. The other ferromagnetic layer is called the free layer, and its magnetization has two ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/12H01L43/08H10N50/01H10N50/10
CPCH10N50/01H10N50/10
Inventor 李辉辉
Owner CETHIK GRP
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