Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Maskless plasmon direct-writing photoetching system

A plasmon and lithography system technology, applied in the field of micro-nano processing, can solve the problem of inability to realize maskless direct writing lithography, and achieve the effect of low preparation cost and high lithography accuracy

Inactive Publication Date: 2021-03-26
UNIV OF SCI & TECH OF CHINA
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above achievements are masked lithography, which cannot realize flexible maskless direct writing lithography

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Maskless plasmon direct-writing photoetching system
  • Maskless plasmon direct-writing photoetching system
  • Maskless plasmon direct-writing photoetching system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0039] It should be understood, however, that these descriptions are exemplary only and are not intended to limit the scope of the present invention. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the invention. It may be evident, however, that one or more embodiments may be practiced without these specific details. In addition, in the following description, descriptions of known technologies are omitted to avoid unnecessarily confusing the concept of the present invention.

[0040] The terminology used herein is for the purpose of describing particular embodiments only, and is not intended to b...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a maskless plasmon direct-writing photoetching system which comprises a light field regulation and control chip used for exciting to generate surface plasmon as an exposure light field of direct-writing photoetching, a plasma direct writing light path used for providing incident light for a light field regulation and control chip, a spatial phase imaging device, a passive leveling device and an adjusting device, wherein the spatial phase imaging device includes a detector and a frequency conversion grating, the frequency conversion grating receives reflected light of asample and generates interference fringes, and the detector receives the interference fringes and judges the distance between the light field regulation and control chip and the sample; the passive leveling device is used for passively adjusting the parallelism of the chip and the surface of the sample during high-precision contact exposure; and the adjusting device is used for adjusting the relative position of the light field regulation and control chip and the sample, the distance between the light field regulation and control chip and the sample can be accurately adjusted through the spatial phase imaging device, a complex and high-precision system design is not needed, the preparation cost is low, higher photoetching precision can be achieved, and the precision can reach 20-500 nm.

Description

technical field [0001] The invention relates to the technical field of micro-nano processing, in particular to a maskless plasmon direct writing photolithography system, which can perform direct writing photolithography with a resolution of 100 nanometers or less. Background technique [0002] Photolithography is the most important part of micro-nano manufacturing technology. According to whether a mask is required in the lithography process, the lithography technology can be divided into mask lithography and maskless direct writing lithography. Compared with masked lithography, the biggest advantage of maskless direct writing lithography is that it can achieve flexible definition of lithography patterns without pre-fabricated masks, so it is more suitable for use as a scientific research instrument. [0003] Electron beam lithography and ion beam lithography in maskless direct writing lithography can achieve processing with a precision of several nanometers due to their ex...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/20
CPCG03F7/70008G03F7/70383G03F7/7055
Inventor 王亮许凯郭松坡
Owner UNIV OF SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com