Maskless plasmon direct-writing photoetching system

A plasmon and lithography system technology, applied in the field of micro-nano processing, can solve the problem of inability to realize maskless direct writing lithography, and achieve the effect of low preparation cost and high lithography accuracy

Inactive Publication Date: 2021-03-26
UNIV OF SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the above achievements are masked lithography, which cannot realize flexible maskless direct writing lithography

Method used

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  • Maskless plasmon direct-writing photoetching system
  • Maskless plasmon direct-writing photoetching system
  • Maskless plasmon direct-writing photoetching system

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Embodiment Construction

[0038] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0039] It should be understood, however, that these descriptions are exemplary only and are not intended to limit the scope of the present invention. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the invention. It may be evident, however, that one or more embodiments may be practiced without these specific details. In addition, in the following description, descriptions of known technologies are omitted to avoid unnecessarily confusing the concept of the present invention.

[0040] The terminology used herein is for the purpose of describing particular embodiments only, and is not intended to b...

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Abstract

The invention discloses a maskless plasmon direct-writing photoetching system which comprises a light field regulation and control chip used for exciting to generate surface plasmon as an exposure light field of direct-writing photoetching, a plasma direct writing light path used for providing incident light for a light field regulation and control chip, a spatial phase imaging device, a passive leveling device and an adjusting device, wherein the spatial phase imaging device includes a detector and a frequency conversion grating, the frequency conversion grating receives reflected light of asample and generates interference fringes, and the detector receives the interference fringes and judges the distance between the light field regulation and control chip and the sample; the passive leveling device is used for passively adjusting the parallelism of the chip and the surface of the sample during high-precision contact exposure; and the adjusting device is used for adjusting the relative position of the light field regulation and control chip and the sample, the distance between the light field regulation and control chip and the sample can be accurately adjusted through the spatial phase imaging device, a complex and high-precision system design is not needed, the preparation cost is low, higher photoetching precision can be achieved, and the precision can reach 20-500 nm.

Description

technical field [0001] The invention relates to the technical field of micro-nano processing, in particular to a maskless plasmon direct writing photolithography system, which can perform direct writing photolithography with a resolution of 100 nanometers or less. Background technique [0002] Photolithography is the most important part of micro-nano manufacturing technology. According to whether a mask is required in the lithography process, the lithography technology can be divided into mask lithography and maskless direct writing lithography. Compared with masked lithography, the biggest advantage of maskless direct writing lithography is that it can achieve flexible definition of lithography patterns without pre-fabricated masks, so it is more suitable for use as a scientific research instrument. [0003] Electron beam lithography and ion beam lithography in maskless direct writing lithography can achieve processing with a precision of several nanometers due to their ex...

Claims

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Application Information

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IPC IPC(8): G03F7/20
CPCG03F7/70008G03F7/70383G03F7/7055
Inventor 王亮许凯郭松坡
Owner UNIV OF SCI & TECH OF CHINA
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