Process for preparing VO2 nanopowder and its adulterant nanopowder

A vanadium dioxide nano and nano powder technology, applied in vanadium oxide and other directions, can solve the problems of impossible mass production and high cost, and achieve the effects of being conducive to commercialization, low investment and easy to obtain

Inactive Publication Date: 2003-10-29
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Decomposition of VOCl by Laser Induced Gas Phase Reaction 3 , although 2 Powder, but this method is obviously very expensive, and it is impossible to produce in large quantities

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] 1. Preparation of VO 2 Nano powder:

[0030] 1) Preparation of VOCl 2 the solution

[0031] Weigh 91g V 2 o 5 , add 100 ~ 200mL distilled water to adjust slurry, add 38g H 2 C 2 o 4 2H 2 O, heat, add 140~160mL concentrated hydrochloric acid in portions under stirring, boil slightly for a few minutes, then add N 2 h 4 ·H 2 O turns the solution dark blue. or in the above V 2 o 5 In the suspension, add 120-140mL concentrated hydrochloric acid and 26-29g N 2 h 4 2HCl, dissolved to obtain a blue solution. with a small amount of V 2 o 5 or N 2 h 4 2HCl(N 2 h 4 ·H 2 O) adjusted to the solution can not detect VO 2 + and V 3+ ion. If necessary, filter to remove insoluble matter, and then dilute to 500mL. VO 2 + and V 3+ The detection of ferrous o-phenanthroline and potassium dichromate method.

[0032] 2) Preparation of precursor

[0033] Weigh 14~16g NH 4 HCO 3 , or 8.5 ~ 10g (NH 4 ) 2 CO 3 , add 40 ~ 60mL distilled water, pass through CO 2...

Embodiment 3

[0039] When preparing Mo-doped material, V 1-x Mo x o 2 The value of x in (02 h 2 2HCl will (NH 4 ) 2 MoO 4 reduction. This reduced product is added to VOCl 2 In the solution, the Mo / V molar ratio was 0.11. Then synthesize the Mo-doped precursor in the same way as in Example 1, but the NH 4 HCO 3 The dosage increased to 19 ~ 22g. Prepare powder with the method for embodiment 1, obtain V 0.985 Mo 0.015 o 2 Mo doped nano powder.

Embodiment 4

[0041] When preparing W dopant, V 1-x W x o 2 The value of x in (04 ) 2 WO 4 add in NH 4 HCO 3 In the solution, the W / V molar ratio was 0.12, and then the W-doped precursor was synthesized in the same way as in Example 1. In the same way, get V 0.981 W 0.019 o 2 Doped powder.

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PUM

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Abstract

The present invention relates to VO 2 A preparation method of nano powder and its dopant nano powder. The method uses V 2 o 5 Reduction of VOCl 2 solution, followed by VOCl 2 The solution is made into vanadyl (IV) basic ammonium carbonate precursor, and the precursor is thermally decomposed to obtain VO 2 Nano powder and its dopant nano powder. The invention has the advantages of simple process, low energy consumption, low investment, low cost, and is convenient for large-scale production, and the nano-ceramic prepared by using the obtained nano-powder has high strength and good thermoelectric performance.

Description

technical field [0001] The invention relates to a preparation method of vanadium dioxide nanometer powder and its dopant nanometer powder. Background technique [0002] As we all know, VO 2 There is a low temperature monoclinic (semiconductor phase) to high temperature tetragonal (metallic phase) transition at about 68°C. During the phase transition, some physical properties such as electrical conductivity, magnetic moment and infrared transmittance jump; especially for VO 2 When doping, the phase transition temperature (Tc) can be adjusted and changed, and the amount of change is related to the type and quantity of doped impurities. For example, doping Cr increases Tc, V 0.976 Cr 0.024 o 2 The Tc is 72°C. For every 1% of Mo atoms added, Tc decreases by 11°C, and for every 1% of W atoms added, Tc decreases by 26°C. VO 2 These special properties can be used in non-contact thermoelectric switches, thermal relays, temperature detectors and temp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G31/02C04B35/495
Inventor 郑臣谋张介立
Owner SUN YAT SEN UNIV
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