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Semiconductor process equipment and electrostatic chuck assembly thereof

A technology of electrostatic chuck and process equipment, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc. It can solve problems such as vacuum leakage and low thermal conductivity, and achieve ceramic fragmentation, good thermal conductivity, and adverse consequences. Effect

Inactive Publication Date: 2021-03-30
北京中硅泰克精密技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor process equipment and its electrostatic chuck assembly, which can solve the problem of low heat conduction efficiency and vacuum caused by the existence of the adhesive layer in the prior art. Leakage and other issues

Method used

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  • Semiconductor process equipment and electrostatic chuck assembly thereof
  • Semiconductor process equipment and electrostatic chuck assembly thereof

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Embodiment Construction

[0021] The present application is described in detail below, and examples of embodiments of the present application are shown in the drawings, wherein the same or similar reference numerals denote the same or similar components or components having the same or similar functions throughout. Also, detailed descriptions of known technologies will be omitted if they are not necessary to illustrate the features of the present application. The embodiments described below by referring to the figures are exemplary only for explaining the present application, and are not construed as limiting the present application.

[0022] Those skilled in the art can understand that, unless otherwise defined, all terms (including technical terms and scientific terms) used herein have the same meanings as commonly understood by those of ordinary skill in the art to which this application belongs. It should also be understood that terms, such as those defined in commonly used dictionaries, should be ...

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Abstract

The invention provides semiconductor process equipment and an electrostatic chuck assembly thereof, the electrostatic chuck assembly comprises an electrostatic chuck and a temperature control base, the electrostatic chuck is arranged on the temperature control base and fixedly connected with the temperature control base, and the electrostatic chuck assembly is characterized in that the electrostatic chuck comprises an electrode and a dielectric layer wrapping the electrode; a temperature control channel is formed in the temperature control base, the temperature control base is made of a metal-based ceramic particle reinforced composite material, and the ratio of a metal matrix to ceramic particles in the composite material is adjusted to a preset value, so that the difference between the thermal expansion coefficient of the temperature control base and the thermal expansion coefficient of the dielectric layer is lower than a preset threshold value. According to the invention, the problems of low heat conduction efficiency, vacuum leakage and the like caused by the existence of an adhesive layer in the prior art can be solved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor process equipment and an electrostatic chuck assembly thereof. Background technique [0002] In the production process of semiconductor products, electrostatic chucks are usually used to absorb processed objects (such as wafers, trays, etc.), and the wafers are heated or cooled during the process to meet the various process requirements of semiconductor products. [0003] Existing electrostatic chucks usually include a stress-relieving silica gel layer, but the silica gel will outgas to a certain extent, and the thermal conductivity is low, making it difficult to meet the requirements of high vacuum etching process, PVD process and ion implantation process, etc. demand. In addition, in some process environments with corrosive gases, such as etching process, since the silicone layer is exposed to the plasma environment, it is easily etched by the plasma, re...

Claims

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Application Information

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IPC IPC(8): H01L21/683H01L21/67
CPCH01L21/67109H01L21/6831H01L21/6833
Inventor 不公告发明人
Owner 北京中硅泰克精密技术有限公司
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