Etching solution and etching method of general resistance silicon product

A kind of etching solution and product technology, applied in the field of semiconductor preparation, can solve the problems of great impact on human health, large environmental pollution, easy to generate bubbles, etc., and achieve the effect of uniform and not violent reaction, consistent before etching, and consistent roughness

Active Publication Date: 2021-04-06
CHONGQING GENORI IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The original etching solution is prepared from hydrofluoric acid, nitric acid, acetic acid and water. The use of high-concentration and highly corrosive strong acids will have a great impact on the health of the operator during the preparation process, and the toxic gas produced will affect the environment. Large pollution, and at the same time, the amount of etching is small within a certain period of time, the efficiency is low, and the reaction is violent and easy to generate bubbles

Method used

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  • Etching solution and etching method of general resistance silicon product
  • Etching solution and etching method of general resistance silicon product
  • Etching solution and etching method of general resistance silicon product

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] The etching solution of general resistivity silicon products, in terms of mass percentage, consists of the following substances:

[0047]

[0048]Solution preparation method: Weigh the required ammonium bifluoride according to the proportion, add an appropriate amount of water to dissolve, and then slowly add potassium nitrate, phosphoric acid, sulfuric acid and ammonium persulfate in sequence according to the amount, stir evenly, cool to room temperature, and add polyethylene Alcohol and propylene glycol block polyether, and finally add the balance of water to volume. It is preferable to use ultrapure water of 18 MΩ.cm.

[0049] Etching method: Heat the solution to 30°C, put the product into the solution, rotate at a constant speed, the etching time is 3 minutes, and the etching amount can reach 0.04mm. It is worth noting that the etching amount of the company's products can meet the production requirements when the etching amount is 0.04mm. If the etching amount o...

Embodiment 2

[0058] An etching solution for general resistive silicon products, calculated by mass percentage, consists of the following substances:

[0059]

[0060] The solution preparation method and etching method are the same as those in Example 1.

[0061] Figure 10 This example shows the appearance of the sample after etching, the surface is fine and uniform, and there is no bubble point.

Embodiment 3

[0063] The etching solution of general resistance silicon products, in terms of mass percentage, consists of the following substances:

[0064]

[0065] The solution preparation method and etching method are the same as those in Example 1. Figure 11 This example shows the appearance of the sample after etching. The surface of the sample after etching is fine and uniform, with no bubble points and no color difference.

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Abstract

The invention relates to an etching solution for a general resistance silicon product. The etching solution is composed of ammonium bifluoride, potassium nitrate, sulfuric acid, ammonium persulfate, polyethylene glycol, phosphoric acid and a propylene glycol block polyether aqueous solution. According to the characteristics of common resistance silicon products, the traditional etching solution prepared from high-concentration and high-corrosivity hydrofluoric acid, nitric acid, acetic acid and water is improved, a certain amount of HF can be generated according to a certain rate when ammonium bifluoride and sulfuric acid are properly proportioned, and a small amount of potassium nitrate, ammonium persulfate and phosphoric acid are proportioned for etching. The spots or chromatic aberration phenomena generated in incomplete or uneven etching are reduced. The reaction is uniform and mild, the roughness is consistent with that before etching, and the roughness is not increased.

Description

technical field [0001] The invention belongs to the technical field of semiconductor preparation, and relates to an etching solution for general resistive silicon products and an etching method thereof. Background technique [0002] Semiconductors now account for most of the world's economy and have a huge impact on economic growth. Semiconductor technology is developing at an ever-changing speed. Now the 12-inch wafer semiconductor production process is produced in China, and China is worthy of being the world's largest semiconductor consumer compared to any semiconductor manufacturing country in the world. [0003] However, with the development of semiconductor technology, the ever-expanding wafers also begin to require high-integration and high-precision circuits. In the semiconductor slicing production process using silicon wafers as raw materials, equipment accessories that have an impact on circuit integration need to be integrated with the wafers. The raw material is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/08H01L21/306
CPCC09K13/08H01L21/30604
Inventor 王燕清
Owner CHONGQING GENORI IND CO LTD
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