Contact structure, semiconductor device structure and preparation methods of contact structure and semiconductor device structure

A technology of contact structure and device structure, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as uneven contours and affecting the contact conductivity of bit lines, so as to ensure electrical conductivity and complete morphology , to avoid the effect of oxidation

Pending Publication Date: 2021-04-13
CHANGXIN MEMORY TECH INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Based on the above situation, aiming at the problem that the contact structure of the bit line in the conventional memory is not uniform and affects the conductivity of the bit line contact, a contact structure, a semiconductor device structure and a preparation method thereof are provided

Method used

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  • Contact structure, semiconductor device structure and preparation methods of contact structure and semiconductor device structure
  • Contact structure, semiconductor device structure and preparation methods of contact structure and semiconductor device structure
  • Contact structure, semiconductor device structure and preparation methods of contact structure and semiconductor device structure

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Embodiment Construction

[0097] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. A preferred embodiment of the application is shown in the drawings. However, the present application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of this application more thorough and comprehensive.

[0098] It should be noted that when an element is considered to be "connected" to another element, it may be directly connected to and integrally integrated with the other element, or there may be an intervening element at the same time. The terms "mounted", "one end", "the other end" and similar expressions are used herein for the purpose of description only.

[0099] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commo...

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Abstract

The invention relates to a contact structure, a semiconductor device structure, and preparation methods of the contact structure and the semiconductor device structure. The contact structure comprises: a conductive plug; and a passivation protection layer which covers the side wall of the conductive plug. According to the contact structure, the passivation protection layer is formed on the side wall of the conductive plug, so that the conductive plug is prevented from being exposed in the air, the surface of the conductive plug is prevented from being oxidized, the passivation protection layer can protect the conductive plug from being removed in an acid pickling process, the complete morphology of the conductive plug is ensured, and the conductive performance of a device is ensured.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a contact structure, a semiconductor device structure and a preparation method thereof. Background technique [0002] The contact structure (for example, the bit line contact structure) in the DRAM (Dynamic Random Access Memory) manufacturing process is generally formed by dry etching after filling doped polysilicon, but the existing process forms the bit line structure The surface of the polysilicon sidewall is easily oxidized to form silicon oxide after contact with air, and is side-etched in the pickling process after the subsequent dry etching, resulting in damage to the sidewall profile of the bit line contact structure, and the bit line in the storage element. The width of the line shrinks accordingly, and the narrowing of the width will cause its resistance to rise, so that the current of the memory cell becomes smaller, resulting in ...

Claims

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Application Information

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IPC IPC(8): H01L21/768H01L27/108
CPCH01L21/76897H10B12/01
Inventor 金星
Owner CHANGXIN MEMORY TECH INC
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