Ferroelectric thin-film capacitor applied to ferroelectric memory

A ferroelectric thin film and memory technology, applied in the field of ferroelectric thin film capacitors, can solve the problems of poor performance, poor performance, and poor leakage current characteristics of PZT ferroelectric capacitors, achieve fatigue and retention performance improvement, reduce aggregation, and improve The effect of the interface

Inactive Publication Date: 2021-04-16
NANJING UNIV OF POSTS & TELECOMM
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  • Claims
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Problems solved by technology

[0003] As the main storage medium of ferroelectric memory, PZT ferroelectric capacitor has a large fatigue rate and poor leakage current characteristics. Due to the

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  • Ferroelectric thin-film capacitor applied to ferroelectric memory

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[0016]In order to make the objectives, technical solutions and advantages of the present invention, the present invention will be described in further detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely intended to illustrate the invention and are not intended to limit the invention.

[0017]Such asfigure 1An ferroelectric thin film capacitance applied to a ferroelectric reservoir, including a silicon-based layer 1, an upper electrode layer 2, a ferroelectric thin film layer 3, and a lower electrode layer 4, the upper electrode layer 2, an iron electricity The film layer 3 and the lower electrode layer 4 are sequentially disposed on the silicon base layer 1 and is provided between the upper electrode layer 2, and the lower electrode layer 4 and the ferroelectric thin film layer 3 respectively provide a buffer layer 5, respectively, in the buffer layer 5 and iron An isolation layer 6 is ...

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Abstract

The invention discloses a ferroelectric thin-film capacitor applied to a ferroelectric memory. The ferroelectric thin-film capacitor comprises a silicon substrate layer, an upper electrode layer, a ferroelectric thin-film layer and a lower electrode layer, wherein the upper electrode layer, the ferroelectric thin-film layer and the lower electrode layer are sequentially arranged on the silicon substrate layer; buffer layers are respectively arranged among the upper electrode layer, the lower electrode layer and the ferroelectric thin-film layer; isolation layers are arranged between the buffer layers and the ferroelectric thin-film layer; and grid-shaped metal interconnections are arranged at the upper part of the upper electrode layer. According to the invention, the isolation layers are introduced, so an interface is improved, the aggregation degree of oxygen vacancies in a thin film is reduced, and the fatigue and retention performance of the ferroelectric thin film are greatly improved.

Description

technical field [0001] The invention relates to the field of ferroelectric thin films, in particular to a ferroelectric thin film capacitor used in ferroelectric storage devices. Background technique [0002] Ferroelectric memory is a non-volatile memory with a special process. It uses artificially synthesized lead-zirconium-titanium PZT material to form memory crystals. Ferroelectric memory can still continue to save data after power failure, has a fast writing speed and has an unlimited writing life, and is not easy to be damaged. Therefore, compared with earlier non-volatile memory technologies such as flash memory and EEPROM, ferroelectric memory has higher write speed and longer read and write life. [0003] As the main storage medium of ferroelectric memory, PZT ferroelectric capacitor has a large fatigue rate and poor leakage current characteristics. Due to the poor crystallization properties of ferroelectric thin films prepared on metal Pt, the performance of PZT fe...

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Application Information

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IPC IPC(8): H01G4/33H01L27/11507
Inventor 段阳胡芳仁成宏卜张伟张雪花
Owner NANJING UNIV OF POSTS & TELECOMM
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