High-power semiconductor optical amplifier

A technology of optical amplifiers and semiconductors, applied in the field of optoelectronics, can solve problems such as insufficient gain, and achieve the effects of wide-spectrum gain, high power, and small fluctuations

Pending Publication Date: 2021-04-16
苏州零维量点光电科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, quantum dot materials have the disadvantage of insufficient gain compared with traditional quantum well materials

Method used

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Embodiment Construction

[0022] It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other.

[0023] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", " The orientation or positional relationship indicated by "vertical", "horizontal", "top", "bottom", "inner", "outer" etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and Simplified descriptions do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and thus should not be construed as limiting the scope of protection of the present application. In addition, the terms "first", "second" and the like are used for descriptive purpo...

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Abstract

A high-power semiconductor optical amplifier comprises a plurality of gain media which are sequentially arranged in the light propagation direction and used for amplifying signal light input into the gain media, each gain medium comprises a substrate, a lower limiting layer, an active layer and an upper limiting layer, the lower limiting layer, the active layer and the upper limiting layer are sequentially arranged above the substrate in a stacked mode, and the active layer is made of quantum dot materials. The high-power semiconductor optical amplifier has the following beneficial effects that spectral gain wider than that of a quantum well structure is brought by the non-uniform broadening characteristic of quantum dots, the quantum dot material structure is utilized, and a special multimode interference principle is adopted, that is, a cascade structure is combined, higher output power is obtained than that of other quantum dot semiconductor optical amplifiers or reflective semiconductor optical amplifiers, and compared with a traditional quantum well scheme, the semiconductor optical amplifier is wider in gain, smaller in fluctuation and higher in power.

Description

【Technical field】 [0001] The invention relates to the field of optoelectronics, in particular to a high-power semiconductor optical amplifier. 【Background technique】 [0002] An optical amplifier is a subsystem product that can amplify optical signals in an optical fiber communication system. The principle of the optical amplifier is basically based on the stimulated radiation of laser, and the amplification effect is realized by converting the energy of the pump light into the energy of the signal light. The successful development and industrialization of optical amplifiers is a very important achievement in optical fiber communication technology, which greatly promotes the development of optical multiplexing technology, optical soliton communication and all-optical network. There are two main types of optical amplifiers, semiconductor optical amplifiers and optical fiber amplifiers. A semiconductor amplifier generally refers to a traveling wave optical amplifier, and its...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/34H01S5/50
Inventor 陈嘉健陈亦凡魏玲
Owner 苏州零维量点光电科技有限公司
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