A mems capacitive flow sensor and preparation method thereof
A flow sensor and capacitive technology, applied in the field of micro-electromechanical systems (MEMS), can solve problems such as poor linearity, poor impedance matching, and simple structure, and achieve the effects of low cost, high consistency, and high linearity
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Embodiment 1
[0038] see figure 1 , the present invention proposes a MEMS capacitive flow sensor, the MEMS capacitive flow sensor includes: a substrate 6; an insulating layer 5, the insulating layer 5 is arranged on the substrate 6; a first electrode 3, a second electrode 4 It is arranged on the insulating layer 5; the micro-channel is arranged on the insulating layer 5, preferably, the first electrode 3 and the second electrode 4 are symmetrically arranged on both sides of the micro-channel.
[0039] Wherein, the micro-channel includes an arc-shaped bottom wall, and the bottom wall includes a first dielectric layer 2, a second dielectric layer 8, and an interlayer between the first dielectric layer 2 and the second dielectric layer 8. between the third electrode 1;
[0040] The third electrode 1 and the first electrode 3 and the second electrode 4 respectively constitute a first sensitive capacitor and a second sensitive capacitor of the MEMS capacitive flow sensor.
[0041] Optionally, ...
Embodiment 2
[0053] see figure 2 , the present invention also proposes a method for preparing a MEMS capacitive flow sensor, comprising the following steps:
[0054] S1: select the substrate,
[0055] S2: forming an insulating layer on the substrate;
[0056] S3: forming a first electrode and a second electrode arranged at intervals on the insulating layer;
[0057] S4: forming a sacrificial layer on the insulating layer;
[0058] S5: Etching the sacrificial layer to form an arc shape of the micro-channel;
[0059] S6: forming a first dielectric layer on the upper surface of the sacrificial layer;
[0060] S7: forming a third electrode layer on the first dielectric layer;
[0061] S8: forming a second dielectric layer on the third electrode layer;
[0062] S9: removing the sacrificial layer to release the microchannel.
[0063] Among them, specifically:
[0064] Select the substrate, for example, choose a 500μm thick N-type (100) single crystal silicon wafer as the substrate 6, and ...
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