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A mems capacitive flow sensor and preparation method thereof

A flow sensor and capacitive technology, applied in the field of micro-electromechanical systems (MEMS), can solve problems such as poor linearity, poor impedance matching, and simple structure, and achieve the effects of low cost, high consistency, and high linearity

Active Publication Date: 2021-06-01
NANJING GAOHUA TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the piezoresistive MEMS flow sensor has high linearity, but is greatly affected by the ambient temperature; the piezoelectric MEMS flow sensor has a simple structure, but has poor impedance matching with the surrounding medium; The impedance matching of the surrounding medium is good, but there is generally a problem of poor linearity

Method used

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  • A mems capacitive flow sensor and preparation method thereof
  • A mems capacitive flow sensor and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0038] see figure 1 , the present invention proposes a MEMS capacitive flow sensor, the MEMS capacitive flow sensor includes: a substrate 6; an insulating layer 5, the insulating layer 5 is arranged on the substrate 6; a first electrode 3, a second electrode 4 It is arranged on the insulating layer 5; the micro-channel is arranged on the insulating layer 5, preferably, the first electrode 3 and the second electrode 4 are symmetrically arranged on both sides of the micro-channel.

[0039] Wherein, the micro-channel includes an arc-shaped bottom wall, and the bottom wall includes a first dielectric layer 2, a second dielectric layer 8, and an interlayer between the first dielectric layer 2 and the second dielectric layer 8. between the third electrode 1;

[0040] The third electrode 1 and the first electrode 3 and the second electrode 4 respectively constitute a first sensitive capacitor and a second sensitive capacitor of the MEMS capacitive flow sensor.

[0041] Optionally, ...

Embodiment 2

[0053] see figure 2 , the present invention also proposes a method for preparing a MEMS capacitive flow sensor, comprising the following steps:

[0054] S1: select the substrate,

[0055] S2: forming an insulating layer on the substrate;

[0056] S3: forming a first electrode and a second electrode arranged at intervals on the insulating layer;

[0057] S4: forming a sacrificial layer on the insulating layer;

[0058] S5: Etching the sacrificial layer to form an arc shape of the micro-channel;

[0059] S6: forming a first dielectric layer on the upper surface of the sacrificial layer;

[0060] S7: forming a third electrode layer on the first dielectric layer;

[0061] S8: forming a second dielectric layer on the third electrode layer;

[0062] S9: removing the sacrificial layer to release the microchannel.

[0063] Among them, specifically:

[0064] Select the substrate, for example, choose a 500μm thick N-type (100) single crystal silicon wafer as the substrate 6, and ...

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Abstract

The present invention proposes a MEMS capacitive flow sensor, comprising: a substrate; an insulating layer, the insulating layer is arranged on the substrate; a first electrode, a second electrode, and the first electrode and the second electrode are arranged at intervals On the insulating layer; the micro-channel, the micro-channel is arranged on the insulating layer; wherein, the micro-channel comprises an arc-shaped bottom wall, and the bottom wall comprises a first dielectric layer, a second A dielectric layer, and a third electrode sandwiched between the first dielectric layer and the second dielectric layer; the third electrode forms the MEMS capacitive flow rate with the first electrode and the second electrode respectively. The first sensitive capacitance and the second sensitive capacitance of the sensor. The sensor of the invention has the advantages of high linearity and high sensitivity; and the MEMS processing technology can be used for high-precision, high-consistency, low-cost, batch and miniaturized preparation.

Description

technical field [0001] The invention relates to the field of microelectromechanical systems (MEMS), in particular to a MEMS capacitive flow sensor and a preparation method thereof. Background technique [0002] Traditional flow sensors usually include strain gauge flow sensors and turbine flow sensors, which usually have the disadvantages of large volume, high cost, and low precision. In recent years, with the vigorous development of MEMS technology, many MEMS flow sensors have emerged. Compared with traditional flow sensors, MEMS flow sensors have the advantages of high sensitivity, high precision, small size and low cost. Common MEMS flow sensors include piezoresistive MEMS flow sensors, piezoelectric MEMS flow sensors, and capacitive MEMS flow sensors. Among them, the piezoresistive MEMS flow sensor has high linearity, but is greatly affected by the ambient temperature; the piezoelectric MEMS flow sensor has a simple structure, but has poor impedance matching with the su...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01F1/56B81B7/02
Inventor 李维平兰之康
Owner NANJING GAOHUA TECH