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HfO2-based memristor with metal Hf buffer layer and manufacturing method of HfO2-based memristor

A fabrication method and buffer layer technology, applied in electrical components and other directions, can solve the problems of poor repeatability, complex process steps, and high cost of memristor fabrication

Pending Publication Date: 2021-04-23
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The present invention prepares a kind of HfO with stable switching performance through the magnetron sputtering deposition process 2 The base memristor solves the problems of high production cost, complicated process steps and poor repeatability of existing memristors

Method used

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  • HfO2-based memristor with metal Hf buffer layer and manufacturing method of HfO2-based memristor
  • HfO2-based memristor with metal Hf buffer layer and manufacturing method of HfO2-based memristor
  • HfO2-based memristor with metal Hf buffer layer and manufacturing method of HfO2-based memristor

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Experimental program
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Effect test

Embodiment 1

[0033] Such as figure 1 As shown, a HfO with metal Hf buffer layer 2 A method for manufacturing a base memristor, comprising the steps of:

[0034] Step 1. For commercial Pt / Ti / SiO 2 / Si substrate is cleaned, specifically including the following sub-steps:

[0035] (a) The commercial Pt / Ti / SiO 2 / Si substrate is immersed in deionized water for 5 minutes and ultrasonically oscillated, among which: the thickness of Pt is 150nm, the thickness of Ti is 20nm, and the thickness of SiO 2 The thickness of Si is 500nm and the thickness of Si is 500μm; (b) take out sub-step (a) commercial Pt / Ti / SiO 2 / Si substrate immersed in acetone for 5min and ultrasonically oscillated; (c) take out the sub-step (b) commercial Pt / Ti / SiO 2 / Si substrate immersed in deionized water for 5 min; (d) take out the sub-step (c) commercial Pt / Ti / SiO 2 / Si substrate immersed in absolute ethanol for 5 min; (e) take out the sub-step (d) commercial Pt / Ti / SiO 2 / Si substrate immersed in deionized water fo...

Embodiment 2

[0041] Under the same experimental parameters without adding metal Hf buffer layer and utilizing the HfO processed by the method of the present invention 2 The base memristive device is tested for forming / set / reset at room temperature, and the test results are as follows figure 2 As shown, the figure (a) adopts the structure of TiN / HfO 2 / Pt memristor's current-voltage characteristic curve, figure (b) is the structure of TiN / HfO 2 The current-voltage characteristic curve of / Hf / Pt memristor. From the comparison between Figure (a) and Figure (b), it can be seen that the use of metal Hf buffer layer can significantly enhance the diffusion of oxygen ions, shorten the formation path of conductive filaments, and make it easier to produce stable conductive filaments based on oxygen vacancies. TiN / HfO produced by the present invention 2 The current-voltage characteristic curves of / Hf / Pt memristor at 85 ℃ with different cycles, such as image 3 As shown, it can be seen that the ...

Embodiment 3

[0043] Utilize the TiN / HfO that the inventive method makes 2 / Hf / Pt memristors are tested for current-voltage characteristics at different temperatures, and TiN / HfO can be seen 2 The / Hf / Pt memristor has stable switching performance at different temperatures and has good memristive performance. The test results are as follows Figure 4 shown.

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Abstract

The invention belongs to the technical field of microelectronic materials and semiconductor devices, and relates to an HfO2-based memristor with a metal Hf buffer layer and a manufacturing method of the HfO2-based memristor. The manufacturing method comprises the following steps of: (1) cleaning a commercial Pt / Ti / SiO2 / Si substrate; (2) depositing a metal Hf buffer layer film by using a lower electrode mask plate; (3) depositing an HfO2 resistive function layer film by using the lower electrode mask; (4) performing nitrogen annealing treatment on the HfO2 resistive function layer film; and (5) depositing a metal upper electrode layer film by using an upper electrode mask, thereby finally completing the manufacturing of the HfO2-based memristor (TiN / HfO2 / Hf / Pt) with the metal Hf buffer layer. The HfO2-based memristor with the metal Hf buffer layer is manufactured through magnetron sputtering; the memristor is simple in structure and is high in repeatability; the manufacturing cost of the memristor is reduced; the memristor has a scientific research value; and the application and popularization of a fourth passive circuit element are facilitated.

Description

technical field [0001] The present invention relates to a kind of HfO with metal Hf buffer layer 2 A base memristor and a manufacturing method thereof belong to the technical field of microelectronic materials and semiconductor devices. Background technique [0002] Memristor is a new type of two-terminal passive electronic component other than resistors, capacitors and inductors. It has obvious advantages in terms of integration, speed, and power consumption. It meets the large capacity and low power consumption of new electronic storage materials and devices. The development trend can replace flash memory and dynamic / static random access memory to become the next generation of high-speed non-volatile memory, continuing Moore's Law. [0003] The typical structure of a memristor is a "MIM sandwich" structure, which consists of an upper electrode, a resistive functional layer and a lower electrode from top to bottom, such as the lower electrode-TiAlOx-upper electrode structu...

Claims

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Application Information

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IPC IPC(8): H01L45/00
Inventor 王德君白娇谢威威周大雨张伟奇
Owner DALIAN UNIV OF TECH
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