Direct-current solid-state switch based on modular SiC JFET active clamping control series technology and control method of direct-current solid-state switch

Abstract

The invention discloses a direct-current solid-state switch based on a modular SiC JFET active clamping control series technology and a control method of the direct-current solid-state switch. The direct-current solid-state switch comprises a detection module, a control module and a solid-state switch module. The detection module and the solid-state switch module are connected in series on the DC bus, and the control module is connected in parallel at two ends of the detection module and the solid-state switch module. The control method comprises the following steps: S1, realizing voltage feedback by utilizing the voltage division circuit; S2, comparing the voltage at the two ends of the DS of the fed-back Model1 and Model2 with a reference voltage Vref; wherein the feedback control circuit outputs a switching-on or switching-off signal to drive the Model1 module and the Model2 module to be switched on or switched off. According to the invention, through a series method of single-drive series connection and active clamping, the voltage borne by the power semiconductor in the module is effectively suppressed; 10 SiC JFETs can be easily connected in series for use, the reliability is high, the cost is low, and the control is simple.

Description

technical field [0001] The invention belongs to the technical field of DC power distribution network, and in particular relates to a DC solid-state switch with modularized SiC JFET active clamping control series technology and a control method thereof. Background technique [0002] With the increasing shortage of fossil energy and environmental pollution, as well as the rapid development of distributed energy technologies such as wind and power storage, intermittent and waveform renewable energy is connected to the grid on a large scale. Due to its better compatibility with new energy access and energy saving and emission reduction, direct current has been more and more used in fields such as ships, power transmission and distribution, rail transit, and big data centers. And with the rapid development of power semiconductor devices, silicon carbide and gallium nitride wide bandgap semiconductor device technologies are becoming more and more mature. Power electronic equipmen...

AI Technical Summary

Problems solved by technology

If the device runs for a long time, the uneven voltage caused by the change of the working environment and device parameters will not be resolved

And when the number of series connection is large, the determination of device parameters will become very complicated

Moreover, the existing DC protection switch needs to rely on a complex and expensive overcurrent sensing circuit, and an independent auxiliary power supply is required to supply power to the control circuit and drive circuit of the protection switch. The control circuit only has one fault threshold without considering the processing of different faults method, and only conduct experimental verification on the situation of exceeding the rated current, without considering the response characteristics in the case of actual high current short circuit

Since there is no effective power semiconductor series technology, it cannot be applied in the medium and high voltage field

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