Secondary doped silicon-based negative electrode material and preparation method thereof

A silicon-based negative electrode material and secondary doping technology, which is applied in the direction of negative electrodes, secondary batteries, battery electrodes, etc., can solve the problem of hindering the development of silicon-based negative electrode materials, failing to meet high energy requirements, and reducing the first coulombic efficiency of secondary batteries and other issues, to achieve the effect of easy mass production, low cost, and improved stability

Active Publication Date: 2021-05-04
SHANGHAI SHANSHAN TECH CO LTD
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AI Technical Summary

Problems solved by technology

The negative electrode material of traditional lithium-ion batteries is graphite, but the theoretical capacity of graphite is only 372mAh/g, which cannot meet the high energy demand of lithium-ion batteries in the current industry
[0003] At present, among the anode materials for lithium-ion batteries developed, silicon-based materials are favored for their low potential and

Method used

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  • Secondary doped silicon-based negative electrode material and preparation method thereof
  • Secondary doped silicon-based negative electrode material and preparation method thereof
  • Secondary doped silicon-based negative electrode material and preparation method thereof

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preparation example Construction

[0043] Correspondingly, the embodiment of the present application also provides a method for preparing the above-mentioned secondary doped silicon-based negative electrode material, including:

[0044] Step S1: Reacting silicon, silicon dioxide, and a substance including a first metal element to form a first product, the first product includes silicon, silicon oxide, and a silicate of the first metal element, wherein the silicon The general formula of the oxide is SiOx, 0

[0045] Step S2: Make the median particle size of the first product 1 μm-99 μm, and then perform carbon coating on the surface of the first product to form a second product, the second product includes an inner core and a carbon coating layer , the inner core at this time includes silicon, silicon oxide and silicate of the first metal element;

[0046] Step S3: making the second product react with a substance including a second met...

Embodiment 1

[0054] Mix 10Kg of silicon powder and silicon dioxide powder evenly at a molar ratio of 1:1, then add 1Kg of magnesium, and heat at high temperature under high temperature and vacuum conditions (0.01-5Pa, 1000°C-1400°C), a gas phase reaction occurs to form magnesium-doped Silicon oxide A, cooled and precipitated at a temperature of 700°C-800°C;

[0055] Put magnesium-doped silicon oxide into a ball mill by ball milling method, and ball mill for 4 hours under the condition of 1200r / min until the particle size of magnesium-doped silicon oxide is 5 μm;

[0056] Put the ground magnesium-doped silicon oxide into the rotary furnace, use the gas phase coating method, under the condition of nitrogen protection, heat up to 900°C at a speed of 3°C / min, then start to pass the propanol gas, the propanol gas The gas flow rate is 0.8L / min, the constant temperature is 10h, and the material B is obtained. In the material B, the weight percentage of the carbon weight in the material A is 5% fo...

Embodiment 2

[0059] Mix 10Kg of silicon powder and silicon dioxide powder evenly at a molar ratio of 1:1, then add 1Kg of magnesium, and heat at high temperature under high temperature and vacuum conditions (0.01-5Pa, 1000°C-1400°C), a gas phase reaction occurs to form magnesium-doped Silicon oxide A, cooled and precipitated at a temperature of 700°C-800°C;

[0060] Put magnesium-doped silicon oxide into a ball mill by ball milling method, and ball mill for 4 hours under the condition of 1200r / min until the particle size of magnesium-doped silicon oxide is 5 μm;

[0061] Put the ground magnesium-doped silicon oxide into the rotary furnace, use the gas phase coating method, under the condition of nitrogen protection, heat up to 900°C at a speed of 3°C / min, then start to pass the propanol gas, the propanol gas The gas flow rate is 0.8L / min, the constant temperature is 10h, and the material B is obtained. In the material B, the weight percentage of the carbon weight in the material A is 5% fo...

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Abstract

The invention provides a secondary doped silicon-based negative electrode material and a preparation method thereof, the secondary doped silicon-based negative electrode material comprises an inner core and a carbon coating layer; the inner core comprises silicon, a silicon oxide, silicate of a first metal element and silicate of a second metal element, the general formula of the silicon oxide is SiOx, x is greater than 0 and less than 2; the activity of the first metal element is lower than that of the second metal element; and the carbon coating layer is coated on the surface of the inner core. According to the secondary doped silicon-based negative electrode material and the preparation method of the secondary doped silicon-based negative electrode material, the first coulombic efficiency and the capacity retention ratio of a secondary battery can be improved.

Description

technical field [0001] The present application relates to the field of secondary batteries, in particular to a secondary doped silicon-based negative electrode material and a preparation method thereof. Background technique [0002] With the development of electric vehicles, portable electric tools and household appliances, the demand for lithium-ion batteries with high initial coulombic efficiency, high energy density, and high cycle performance is increasing. The negative electrode material of traditional lithium-ion batteries is graphite. However, the theoretical capacity of graphite is only 372mAh / g, which cannot meet the high energy demand of lithium-ion batteries in the current industry. [0003] Among the currently developed negative electrode materials for lithium-ion batteries, silicon-based materials are favored for their low potential and extremely high theoretical capacity. Due to the presence of oxygen, silicon oxide-based negative electrode materials form oxide...

Claims

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Application Information

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IPC IPC(8): H01M4/38H01M4/62H01M10/0525
CPCH01M4/386H01M4/625H01M10/0525H01M2004/027Y02E60/10
Inventor 吴玉虎马飞魏良勤李宇飞刘冬冬陈星凯
Owner SHANGHAI SHANSHAN TECH CO LTD
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