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Back gate full-controlled AlGaN/GaN heterojunction enhanced power HEMT device and preparation method thereof

A fully-controlled, heterojunction technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of gate electrode leakage current and breakdown voltage, etc., and achieves good threshold voltage stability and improved The effect of enhanced breakdown voltage and gate control ability

Active Publication Date: 2021-05-07
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the characteristics of spontaneous polarization and piezoelectric polarization, AlGaN / GaN HEMTs are natural depletion devices, and enhancement devices are required in the field of high-voltage switches. Breakthrough voltage has a great influence

Method used

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  • Back gate full-controlled AlGaN/GaN heterojunction enhanced power HEMT device and preparation method thereof
  • Back gate full-controlled AlGaN/GaN heterojunction enhanced power HEMT device and preparation method thereof
  • Back gate full-controlled AlGaN/GaN heterojunction enhanced power HEMT device and preparation method thereof

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Embodiment 1

[0040] Please refer to figure 1 and figure 2 , figure 1 It is a three-dimensional structure diagram of a back-gate fully-controlled AlGaN / GaN heterojunction enhanced power HEMT device provided by an embodiment of the present invention; figure 2 It is a cross-sectional view of a back-gate fully-controlled AlGaN / GaN heterojunction enhanced power HEMT device provided by an embodiment of the present invention. As shown in the figure, the back-gate fully controlled AlGaN / GaN heterojunction enhancement mode power HEMT device of this embodiment includes: a substrate 1, a P-GaN layer 2, a GaN channel layer 3, an AlGaN barrier layer 4, Source electrode 5 , drain electrode 6 , gate electrode 8 and gate dielectric layer 9 . The substrate 1 , the P-GaN layer 2 , the GaN channel layer 3 and the AlGaN barrier layer 4 are sequentially stacked from bottom to top. The source electrode 5 is arranged on one side of the AlGaN barrier layer 4 , and the drain electrode 6 is arranged on the ot...

Embodiment 2

[0051] This embodiment provides a method for fabricating a back-gate fully controlled AlGaN / GaN heterojunction enhancement mode power HEMT device. Please refer to image 3 image 3 It is a schematic diagram of a preparation method of a back-gate fully-controlled AlGaN / GaN heterojunction enhanced power HEMT device provided by an embodiment of the present invention. As shown in the figure, the method includes:

[0052] S1: select a substrate substrate, and sequentially grow an AlN nucleation layer, a GaN buffer layer, a P-GaN layer, a GaN channel layer and an AlGaN barrier layer on the substrate substrate;

[0053] S2: source and drain electrodes are prepared on the AlGaN barrier layer;

[0054] S3: Etch the AlGaN barrier layer, the GaN channel layer, the P-GaN layer and the partial thickness of the GaN buffer layer between the source electrode and the drain electrode to form a fin-shaped structure;

[0055] S4: depositing a gate dielectric layer between the source electrode a...

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Abstract

The invention relates to a back gate full-controlled AlGaN / GaN heterojunction enhanced power HEMT device and a preparation method thereof. The HEMT device comprises: a substrate, a P-GaN layer, a GaN channel layer and an AlGaN barrier layer which are sequentially stacked from bottom to top; a source electrode disposed on one side of the AlGaN barrier layer; a drain electrode arranged on the other side of the AlGaN barrier layer and opposite to the source electrode, wherein the substrate, the P-GaN layer, the GaN channel layer and the AlGaN barrier layer with partial thickness between the source electrode and the drain electrode form a fin-shaped structure; a gate electrode located between the source electrode and the drain electrode and covering the two side faces, perpendicular to the substrate, of the fin-shaped structure and the top face of the fin-shaped structure, wherein ohmic contact is formed between the gate electrode and the P-GaN layer; and a gate dielectric layer arranged between the gate electrode and the fin-shaped structure. According to the back gate full-controlled AlGaN / GaN heterojunction enhanced power HEMT device, the mode that the P-GaN layer and the gate metal form the back gate is adopted, an AlGaN / GaN heterojunction gate electric field is adjusted, and the breakdown voltage of the device can be improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to a back-gate fully controlled AlGaN / GaN heterojunction enhanced power HEMT device and a preparation method. Background technique [0002] In recent years, the third-generation semiconductors represented by GaN have a large band gap, high breakdown electric field, and high electron saturation velocity, which have attracted many domestic and foreign researchers to conduct extensive and in-depth research, and have achieved remarkable research. results. [0003] With its excellent material properties, AlGaN / GaN heterojunction high electron mobility transistor HEMTs have shown unique advantages in the field of high voltage and high power. The pursuit of high threshold, high voltage and high power devices has attracted a lot of research. In recent years, due to the rapid development of switching power supply and fast charging market, GaN enhancement mode high-power device...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/20H01L29/423H01L29/778H01L21/335
CPCH01L29/0611H01L29/2003H01L29/42316H01L29/778H01L29/66462
Inventor 何云龙马晓华杨凌王冲郑雪峰郝跃
Owner XIDIAN UNIV
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