Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Design and manufacturing method of high-power ultraviolet LED chip with vertical structure

A LED chip and vertical structure technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of small size, high manufacturing cost, and low luminous efficiency

Active Publication Date: 2021-05-11
聚瑞芯光电有限公司
View PDF1 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a design and manufacturing method of a high-power vertical structure ultraviolet LED chip, to solve the problem of low luminous efficiency, small size, high preparation cost and difficulty of the existing ultraviolet LED chip proposed in the above-mentioned background technology. The efficiency is low, the heat dissipation performance is poor, and it is difficult to adapt to the problem of high-power and convenient application in the industry

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Design and manufacturing method of high-power ultraviolet LED chip with vertical structure
  • Design and manufacturing method of high-power ultraviolet LED chip with vertical structure
  • Design and manufacturing method of high-power ultraviolet LED chip with vertical structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0033] see Figure 1-5 , the present invention provides a technical solution: a design and manufacturing method of a high-power vertical structure ultraviolet LED chip, the design of the high-power vertical structure ultraviolet LED chip is as follows: a sapphire substrate is used as a growth substrate for heteroepitaxial growth, Using MOCVD technology to complete the entire epitaxial process, the sapphire substrate adopts an image substrate, that is, a PSS substrate. This substrate adopts a special design, which is a triangular pyramid structure with a vertex angle of 120°. A thin layer of low-temperature InN is grown on the PSS. Then grow a layer of InGaN, then grow a thin layer of AlGaInN, then grow a layer of high-temperature GaN, then grow a layer of n-type AlGaN, then grow an active layer, an electron blocking layer, and then grow a DBR reflective layer. The DBR layer is 10-50 BAlN or BGaN or BN and AlN periodic structure layers, doped with magnesium source and less sila...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention belongs to the technical field of semiconductor electronic information, and particularly relates to a design and manufacturing method of a high-power ultraviolet LED chip with a vertical structure. The design of the high-power ultraviolet LED chip with the vertical structure is as follows: a sapphire substrate is used as a growth substrate, heteroepitaxial growth is carried out, the whole epitaxial process is completed by using an MOCVD technology, the sapphire substrate is an imaging substrate, namely a PSS substrate, the substrate is specially designed and is of a triangular pyramid structure with the vertex angle of 120 DEG, the light emitting efficiency can be greatly improved, and special surface nano-imprinting and double-layer imaging micro-nano processing greatly improve the radiation power and the light emitting efficiency of the ultraviolet light LED , and improve the current diffusion efficiency and the heat dissipation capability of the chip, so that the manufacturing size of the chip can be increased, the reliability of the purple light LED device is effectively improved, and the method can be suitable for industrial-grade application on a large scale.

Description

technical field [0001] The invention relates to the technical field of semiconductor electronic information, in particular to a method for designing and manufacturing a high-power vertical structure ultraviolet LED chip. Background technique [0002] With the advancement of science and technology and the development of new energy sources, solid-state LED lighting will become the trend of lighting in the future world. Due to the advantages of energy saving, environmental protection, safety, long life, low consumption, and low heat, LEDs have been widely used in traffic lights, Traffic lights, landscape decorative lights, display screens, car tail lights, mobile phone backlights, sterilization and other fields. At present, the LEDs on the market are mainly blue-green light, followed by red and yellow light. There are relatively few LED products of purple light and deep ultraviolet light, mainly due to the difficulty in manufacturing high-power deep ultraviolet LEDs and low lum...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/20H01L33/12H01L33/10H01L33/00
CPCH01L33/20H01L33/12H01L33/10H01L33/007
Inventor 王晓波
Owner 聚瑞芯光电有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com