Germanium-arsenic-selenium-tellurium (GeAsSeTe) powder for semiconductor memory, target material and preparation method of GeAsSeTe powder

A memory and semiconductor technology, applied in chemical instruments and methods, selenium/tellurium compounds, binary selenium/tellurium compounds, etc., can solve the problem of volatile, unsuitable for large-scale industrial production of germanium, arsenic, selenium and tellurium compounds, and equipment dependence Large and other problems, to achieve the effect of uniform composition, high density and low oxygen content

Pending Publication Date: 2021-05-14
XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the large dependence on equipment and the volatile raw materials As, Se and Te, etc., this type of method is only suitable for small-scale experimental preparation, and is not suitable for large-scale industrial production of germanium, arsenic, selenium and tellurium compounds.

Method used

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  • Germanium-arsenic-selenium-tellurium (GeAsSeTe) powder for semiconductor memory, target material and preparation method of GeAsSeTe powder
  • Germanium-arsenic-selenium-tellurium (GeAsSeTe) powder for semiconductor memory, target material and preparation method of GeAsSeTe powder

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] The preparation method of the GeAsSeTe powder for the semiconductor memory of the present invention comprises the following steps:

[0036] (1) Mix Se block and As block, Ge block and Te block, Ge block and Se block respectively and put them in a quartz boat and send them into the tube furnace. Nitrogen gas is first introduced into the furnace at a rate of 10 L / min and kept Exclude the air for 30 to 40 minutes. After the quartz boat is put in and continue to ventilate for 20 to 30 minutes, introduce a mixed protective atmosphere with a volume ratio of nitrogen and hydrogen of 7:3 and heat up at 5°C / min and keep it warm to obtain AsSe alloys. , GeTe alloy and GeSe alloy; the Se block and the As block are mixed according to the atomic ratio of Se and As 1:1; the Ge block and the Te block are mixed according to the atomic ratio of Ge and Te 1:1; the Ge The block and the Se block are mixed according to the atomic ratio of Ge and Se at 1:1; the heating and heat preservation ...

Embodiment 2

[0043] The preparation method of the GeAsSeTe powder for the semiconductor memory of the present invention comprises the following steps:

[0044] (1) Mix Se block and As block, Ge block and Te block, Ge block and Se block respectively and put them in a quartz boat and send them into the tube furnace. Nitrogen gas is first introduced into the furnace at a rate of 10 L / min and kept Exclude the air for 30-40 minutes. After the quartz boat is put in and continue to ventilate for 20-30 minutes, introduce a mixed protective atmosphere with a volume ratio of nitrogen and hydrogen of 7:4 and heat up at 10°C / min and keep it warm to obtain AsSe alloys respectively. , GeTe alloy and GeSe alloy; the Se block and the As block are mixed according to the atomic ratio of Se and As 1:1; the Ge block and the Te block are mixed according to the atomic ratio of Ge and Te 1:1; the Ge The block and the Se block are mixed according to the atomic ratio of Ge and Se at 1:1; the heating and heat prese...

Embodiment 3

[0050] The preparation method of the GeAsSeTe powder for the semiconductor memory of the present invention comprises the following steps:

[0051] (1) Mix Se block and As block, Ge block and Te block, Ge block and Se block respectively and put them in a quartz boat and send them into the tube furnace. Nitrogen gas is first introduced into the furnace at a rate of 10 L / min and kept Exclude the air for 30 to 40 minutes. After the quartz boat is put in and continue to ventilate for 20 to 30 minutes, introduce a mixed protective atmosphere with a volume ratio of nitrogen and hydrogen of 7:3 and heat up at 5°C / min and keep it warm to obtain AsSe alloys. , GeTe alloy and GeSe alloy; the Se block and the As block are mixed according to the atomic ratio of Se and As 1:1; the Ge block and the Te block are mixed according to the atomic ratio of Ge and Te 1:1; the Ge The block and the Se block are mixed according to the atomic ratio of Ge and Se at 1:1; the heating and heat preservation ...

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Abstract

The invention discloses a preparation method of GeAsSeTe powder for a semiconductor memory, and belongs to the field of phase change materials. In the preparation method of the GeAsSeTe powder, the four elements of Ge, As, Se and Te are mixed in pairs to prepare three binary alloys, so that high requirements of subsequent powder products on equipment are reduced, and meanwhile, the problems that Se and Te are easy to volatilize and are non-uniformly alloyed with the other two elements are solved. The temperature in the preparation process of the GeAsSeTe powder is low, the situation that due to element volatilization, the component proportion of alloy is not uniform is avoided, the alloying degree of the obtained product is high, the oxygen content is low, and the industrial production requirement is met. The preparation method does not need a vacuum closed environment, the reaction process is simple, the reaction container can be repeatedly used, and the economic cost is low. The invention also discloses the GeAsSeTe powder prepared by the preparation method of the GeAsSeTe powder for the semiconductor memory and a GeAsSeTe target material further prepared from the GeAsSeTe powder. The GeAsSeTe target material has the advantages of high density, uniform components, low oxygen content and the like.

Description

technical field [0001] The invention relates to the field of phase change materials, in particular to a germanium, arsenic, selenium and tellurium powder for semiconductor storage, a target material and a preparation method thereof. Background technique [0002] At present, there are many types of alloys used for phase change memory materials, mainly including GeTe, GeSb, SbTe, GeTeAsSi, GeTeAs, AsSbTe, and GeSbTe. Among them, GeSbTe series alloys are recognized, the most researched, and the most mature phase change materials. It can be seen that chalcogenide compounds are the key materials for phase change storage, mainly referring to the fact that they contain at least one chalcogenide (group VI) Alloy materials of elements, most of these alloy materials refer to some semiconductor elements of Group IV (Si, Ge), Group V (As, Sb, Bi) and Group VI (Se, Te). Phase-change Random Access Memory (PRAM) based on chalcogenides has the advantages of non-volatility, long cycle life,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/00C01B19/04C23C14/34
CPCC01B19/002C01B19/007C23C14/3414C01P2002/72C01P2006/10C01P2006/80
Inventor 沈文兴童培云白平平
Owner XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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