Schottky diode based on silicon carbide planar MOS structure

Abstract

The invention relates to a semiconductor device, in particular to a Schottky diode based on a silicon carbide planar MOS structure. According to the technical scheme provided by the invention, the Schottky diode based on the silicon carbide planar MOS structure comprises a semiconductor substrate and a P-type well region arranged on the semiconductor substrate on the cross section of the Schottky diode, a negative electrode region structure is arranged on one side of the P-type well region, a positive electrode region structure is arranged on the other side of the P-type well region, the P-type well region is in contact with a gate structure region located on the P-type well region, gate metal is arranged on the gate structure region, and the gate metal is in ohmic contact with the gate structure region. According to the invention, the switching loss of the semiconductor device is effectively reduced, the switching speed of the semiconductor device is improved, the switching of the Schottky diode can be controlled by the MOS gate channel, and the electrical performance of the Schottky diode is further improved.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a Schottky diode based on a silicon carbide planar MOS structure. Background technique [0002] Silicon carbide (SiC) material has the advantages of large band gap, high critical breakdown field strength, high thermal conductivity, high saturated electron drift velocity and low dielectric constant, and is widely used in high frequency, high power, high temperature resistance, Anti-radiation and other electronic devices. [0003] Silicon carbide Schottky diodes have a majority of conductive carriers. When a forward bias is applied, the silicon carbide Schottky diodes have a low turn-on voltage. When the applied voltage switches from forward conduction to reverse blocking, there is almost no reverse The reverse recovery current can recover quickly, but due to the Schottky barrier lowering effect under reverse bias, a serious leakage current phenomenon will occur. Contents of the inventi...

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Problems solved by technology

[0003] Silicon carbide Schottky diodes have a majority of conductive carriers. When a forward bias is applied, the silicon carbide Schottky diodes have a low turn-on voltage. When the applied voltage switches from forward conduction to reverse blocking, there is almost no reverse Recovery current can recover quickly, but under reverse bias, due to the Schottky barrier reduction effect, serious leakage current phenomenon will occur

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