Schottky diode based on silicon carbide planar MOS structure

Abstract

The invention relates to a semiconductor device, in particular to a Schottky diode based on a silicon carbide planar MOS structure. According to the technical solution provided by the present invention, the Schottky diode based on the silicon carbide planar MOS structure, on the cross section of the Schottky diode, includes a semiconductor substrate and a P-type In the well region, a negative electrode region structure is arranged on one side of the P-type well region, and an anode region structure is arranged on the other side of the P-type well region, and the P-type well region and the gate located on the P-type well region The structure area is in contact, and a gate metal is arranged on the gate structure area, and the gate metal is in ohmic contact with the gate structure area. The invention effectively reduces the switching loss of the semiconductor device and increases its switching speed, and can also realize the switching of the Schottky diode controlled by the MOS gate channel, thereby improving the electrical performance of the Schottky diode.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a Schottky diode based on a silicon carbide planar MOS structure. Background technique [0002] Silicon carbide (SiC) material has the advantages of large band gap, high critical breakdown field strength, high thermal conductivity, high saturated electron drift velocity and low dielectric constant, and is widely used in high frequency, high power, high temperature resistance, Anti-radiation and other electronic devices. [0003] Silicon carbide Schottky diodes have a majority of conductive carriers. When a forward bias is applied, the silicon carbide Schottky diodes have a low turn-on voltage. When the applied voltage switches from forward conduction to reverse blocking, there is almost no reverse The reverse recovery current can recover quickly, but due to the Schottky barrier lowering effect under reverse bias, a serious leakage current phenomenon will occur. Contents of the inventi...

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Problems solved by technology

[0003] Silicon carbide Schottky diodes have a majority of conductive carriers. When a forward bias is applied, the silicon carbide Schottky diodes have a low turn-on voltage. When the applied voltage switches from forward conduction to reverse blocking, there is almost no reverse Recovery current can recover quickly, but under reverse bias, due to the Schottky barrier reduction effect, serious leakage current phenomenon will occur

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