Method for forming conductive layer using atomic layer deposition process

Abstract

A method for forming conductive layer using atomic layer deposition process reacts a precursor containing metal with a reducing gas, forming a metal atom on a semiconductor substrate and a position deposited metal atoms dissolved by metal halide gas by reacting a sacrificial metal atoms layer with metal halide gas. Moreover, a silicon layer may be additionally formed on the metal layer using a silicon source gas, to thereby alternately stack metal layers and silicon layers.

Description

technical field [0001] The present invention relates to a method for forming a conductive layer on a semiconductor device, in particular to a method for forming a conductive layer by atomic layer deposition. Background of the invention [0002] As the integration of conductor arrangements increases, the design rules decrease. Therefore the aspect ratio of the contact hole becomes higher, however, the junction depth becomes shallower. The junction depth directly depends on the short channel effect of the MOS transistor. That is to say, MOS transistors suitable for highly integrated semiconductor devices require shorter trench lengths and shallow source / drain region depths, that is, shallow junction depths to improve the characteristics of MOS transistors with short trenches. Interconnection techniques for accessing shallow junctions through metal interconnections require a barrier metal layer. This hinders penetration of metal interconnects into shallow junctions, ie preve...

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Problems solved by technology

However, when the titanium silicide layer is formed at a temperature of 600°C or higher, the loss of silicon in the doped layer in contact with the silicon layer will increase, deteriorating the characteristics of junction leakage

Therefore, for highly integrated semiconductor devices that require shallow junctions, it is difficult to form a titanium silicide layer by LPCVD.

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